Allicdata Part #: | IXFP22N65X2-ND |
Manufacturer Part#: |
IXFP22N65X2 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 650V 22A TO-220 |
More Detail: | N-Channel 650V 22A (Tc) 390W (Tc) Through Hole TO-... |
DataSheet: | IXFP22N65X2 Datasheet/PDF |
Quantity: | 100 |
Vgs(th) (Max) @ Id: | 5.5V @ 1.5mA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 390W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2310pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 38nC @ 10V |
Series: | HiPerFET™ |
Rds On (Max) @ Id, Vgs: | 160 mOhm @ 11A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 22A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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IXFP22N65X2 Application Field and Working Principle
The IXFP22N65X2 is a high-performance power field-effect transistor (FET) specifically designed in a TO-247 package for high-power applications such as motor control and switched mode power supplies. The FET provides improved characteristics when compared to traditional FETs. It features low power loss, fast switching speed and extremely low on-state resistance. The IXFP22N65X2 features an N-channel, enhancement-mode design, which makes it well-suited for consumer applications.
Overview
The IXFP22N65X2 is a high-performance power metal oxide semiconductor field-effect transistor (MOSFET) specifically designed using the latest trench technology design in a TO-247 package. This FET provides an enhanced performance when compared with traditional FETs due to its advanced design. The IXFP22N65X2 is designed to handle 25A of continuous drain current and can withstand up to 4A in its limited time overload mode. The FET can handle peak gate voltages up to 50V, making it suitable for high-voltage applications.
The main features of the IXFP22N65X2 include its low power loss, fast switching speed and low on-state resistance. The low on-state resistance enables the FET to reduce heat generation, improve efficiency and lower operating costs. The fast switching speed enables the FET to switch quickly between on and off states.
Working Principle
The IXFP22N65X2 is an N-channel, enhancement-mode MOSFET. It works on the principle of an N-type MOSFET, in which electrons move from the source to the drain when a positive gate voltage is applied. When a positive gate voltage is applied on an N-channel MOSFET, the electric field is created between the source and the gate. This electric field attracts the electrons from the source and pushes them towards the drain. In this way, current starts flowing from the source to the drain.
The IXFP22N65X2 features a depletion-mode MOSFET, which means that the FET is normally off when no gate voltage is applied. When a negative gate voltage is applied, the FET is turned on. This makes the IXFP22N65X2 well-suited for consumer applications, such as motor control and switched mode power supplies. The FET also features a low on-state resistance, which helps to reduce heat generation, improve efficiency and lower operating costs.
Applications
The IXFP22N65X2 is well-suited for high-power applications such as motor control and switched mode power supplies. The FET can be used in a wide variety of electronics from home appliances to industrial computers. It is also suitable for automotive applications such as high power audio amplifiers and start/stop systems, which require high currents but low on-state resistances.
The IXFP22N65X2 is also used in high-power applications such as solar panel inverters and welding systems, which require fast switching speeds and high current capabilities. It is also suitable for power converters and power electronics such as switch-mode power supplies and AC-DC converters.
Conclusion
The IXFP22N65X2 is a high-performance power FET, designed for high-power applications such as motor control and switched mode power supplies. The FET features enhanced characteristics compared to traditional FETs, including low power loss, fast switching speed, and an extremely low on-state resistance. The FET has a wide range of applications, from home appliances to industrial-grade computer systems, automotive applications, and high-power applications such as solar panel inverters and welding systems.
The specific data is subject to PDF, and the above content is for reference
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