| Allicdata Part #: | IXFP38N30X3-ND |
| Manufacturer Part#: |
IXFP38N30X3 |
| Price: | $ 3.31 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | FET N-CHANNEL |
| More Detail: | N-Channel 300V 38A (Tc) 240W (Tc) Through Hole TO-... |
| DataSheet: |  IXFP38N30X3 Datasheet/PDF |
| Quantity: | 114 |
| 1 +: | $ 3.00510 |
| 50 +: | $ 2.41265 |
| 100 +: | $ 2.19813 |
| 500 +: | $ 1.77995 |
| 1000 +: | $ 1.50116 |
| Vgs(th) (Max) @ Id: | 4.5V @ 1mA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 240W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2240pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 35nC @ 10V |
| Series: | HiPerFET™ |
| Rds On (Max) @ Id, Vgs: | 50 mOhm @ 19A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 38A (Tc) |
| Drain to Source Voltage (Vdss): | 300V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IXFP38N30X3 is a 380V, N-Channel PowerTrench MOSFET for power switching applications. This product is specifically designed for switching applications with low gate charge and is suitable for low voltage applications such as DC-DC converters, load switching and many more. This device has a wide drain-source breakdown voltage (Vdss) and a low on-resistance (Rds) to help switch power and reduce losses.
The IXFP38N30X3 has a broad range of applications, including DC-DC converters, lighting, audio and video amplifiers, home appliances, air conditioning controllers, mobile devices, and wireless power supplies. This FET can also be used in power switching applications where the gate drive current is sufficiently high. In addition, the IXFP38N30X3 can handle high loads and high-frequency switching operations.
The IXFP38N30X3 is a N-channel MOSFET which has three grid terminals: the source, the gate and the drain. The source and drain are isolated from each other and the gate is responsible for controlling the current flow between them. When a positive voltage is applied to the gate, it creates an electric field which attracts electrons from the source and pushes them towards the drain, allowing current to flow through the MOSFET.
The working principle of the IXFP38N30X3 is based on the fact that it combines the advantages of a Power MOSFET and a fast switching MOSFET in a single package. The device is suitable for power applications requiring low gate-charge and high drain-current capability. It also has an extremely high input capacitance, enabling higher switching speeds in comparison to other FETs. Additionally, it has a low on-resistance, which helps reduce power losses.
The IXFP38N30X3 is ideal for applications that require low gate-charge and high-current capability. Its superior switching behavior and fast switching speeds make it ideal for applications such as DC-DC converters, lighting, audio and video amplifiers, home appliances, air conditioning controllers, mobile devices, and wireless power supplies.
The specific data is subject to PDF, and the above content is for reference
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