IXFP5N100PM Allicdata Electronics
Allicdata Part #:

IXFP5N100PM-ND

Manufacturer Part#:

IXFP5N100PM

Price: $ 2.72
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 1000V 2.3A TO-220
More Detail: N-Channel 1000V 2.3A (Tc) 42W (Tc) Through Hole TO...
DataSheet: IXFP5N100PM datasheetIXFP5N100PM Datasheet/PDF
Quantity: 14
1 +: $ 2.47590
50 +: $ 1.98878
100 +: $ 1.81201
500 +: $ 1.46726
1000 +: $ 1.23745
Stock 14Can Ship Immediately
$ 2.72
Specifications
Vgs(th) (Max) @ Id: 6V @ 250µA
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: TO-220 Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 42W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1830pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 33.4nC @ 10V
Series: HiPerFET™, PolarP2™
Rds On (Max) @ Id, Vgs: 2.8 Ohm @ 2.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
Drain to Source Voltage (Vdss): 1000V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXFP5N100PM is a N-channel field effect transistor (FET) from IXYS. As one of the power MOSFET family, it offers the best application for high voltage and low current applications. In this article, we will discuss the application field and working principles of IXFP5N100PM.

Application Field

The IXFP5N100PM is designed for a variety of applications, such as motor control, power conversion, UPS systems, welding equipment, and medical instruments. It provides the highest efficiency, reliability, and flexibility.

IXFP5N100PM is an excellent choice for high-performance motor controls and UPS systems. This device can handle up to 100amp and has a voltage rating of 1000V. It offers superior switch performance, with a switching frequency of up to 400kHz. This makes it ideal for optimizing the efficiency of energy conversion processes.

In addition, the IXFP5N100PM can also be used for welding applications. It can handle up to 10A and operates at a voltage of 1000V, ensuring the highest level of power handling capability. It also offers a low on-resistance of 1.5 mohms, enabling a significant reduction in voltage drop and considerable energy savings.

Finally, the IXFP5N100PM is ideal for medical systems, where its superior performance and low on-resistance will help reduce the power consumption of medical instruments. It can handle up to 10 Amps and features a voltage rating of 1000 V.

Working Principle

As with all N-channel MOSFETs, the IXFP5N100PM works based on the effect of electric fields on the charges in the active regions. In a MOSFET, the semiconductor material has two types of active regions; the source and the drain. An electric field is generated between the source and drain when the gate voltage is applied. This electric field creates a transfer of electrons from the source to the drain.

The current through the device is controlled by the gate voltage. When the gate voltage is such that the electric field generated between the source and drain is strong enough to transfer electrons, then electrons will flow from the source to the drain, resulting in a drain current. This is the basic operating principle of a MOSFET.

The main advantage of the IXFP5N100PM is its high current capability, which enables it to operate at high power levels. Its threshold voltage is also low, making it ideal for car powertrains, industrial motor controls, and high-power electric vehicle drivetrains.

In addition, it comes with an integrated temperature sensing circuit, which provides better temperature control and longer life. This makes it an excellent choice for applications where thermal management is critical.

Overall, the IXFP5N100PM is a high-performance, efficient, and reliable power MOSFET. It is ideal for applications such as motor control, power conversion, UPS systems, welding equipment, and medical instruments. With its high current capability and integrated temperature sensing circuit, it provides superior performance and a longer lifespan.

The specific data is subject to PDF, and the above content is for reference

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