IXFP72N20X3 Allicdata Electronics
Allicdata Part #:

IXFP72N20X3-ND

Manufacturer Part#:

IXFP72N20X3

Price: $ 5.20
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: 200V/72A ULTRA JUNCTION X3-CLASS
More Detail: N-Channel 200V 72A (Tc) 320W (Tc) Through Hole TO-...
DataSheet: IXFP72N20X3 datasheetIXFP72N20X3 Datasheet/PDF
Quantity: 49
1 +: $ 4.72500
50 +: $ 3.79814
100 +: $ 3.46059
500 +: $ 2.80223
1000 +: $ 2.36332
Stock 49Can Ship Immediately
$ 5.2
Specifications
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
Package / Case: TO-220-3
Supplier Device Package: TO-220
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 320W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3780pF @ 25V
Vgs (Max): ±20V
Series: HiPerFET™
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Rds On (Max) @ Id, Vgs: 20 mOhm @ 36A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Description

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The IXFP72N20X3 application field and working principle

The IXFP72N20X3 is a type of MOSFET, or Metal Oxide Semiconductor Field Effect Transistor, which is designed for use in low-voltage and low-power applications. This type of transistor is a field-effect device, meaning that its characteristics are determined by the application of an electric field. The IXFP72N20X3 MOSFET is a single-channel device that is ideal for use in low-voltage, low-power applications.

The IXFP72N20X3 is a single-gate field-effect device, meaning that it has one internal gate and one source pin, and is intended to be used as an active device in digital logic circuits such as switching and logic circuits, and in analog circuits such as amplifiers. The IXFP72N20X3 is specifically designed to use in high-speed switching applications where low switching losses and low gate charge are required. Other applications include motor control, battery charging, and audio mixing. The device has a maximum power dissipation of 0.2 W and can operate up to a maximum junction temperature of 175 ℃.

The working principle of the IXFP72N20X3 is based on the concept of field-effect transistor (FET) operation. In a FET, the current flow is controlled by an electric field that is generated by the gate electrode. This field modifies the electrical characteristics of the device, such as its resistance and capacitance, to regulate and switch the current flow in an electrical circuit. The IXFP72N20X3 is a voltage-controlled device, meaning that the drain-source voltage controls the gate-source voltage. The device has excellent switching characteristics, and can be used to switch between on and off states with very fast response times.

The IXFP72N20X3 is a pin-compatible device that can be used as a replacement for other similar transistors. It is also compatible with other gate-drive ICs, including the NXP 74LSseries, 74HC series, and the STMicro STM32F1 series. It is also compatible with most FET drivers and gate-drive buffers. The IXFP72N20X3 is an ideal choice for low-voltage and low-power applications, such as motor control, battery charging, audio mixing, and switching applications.

The specific data is subject to PDF, and the above content is for reference

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