Allicdata Part #: | IXFP56N30X3-ND |
Manufacturer Part#: |
IXFP56N30X3 |
Price: | $ 5.20 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | 300V/56A ULTRA JUNCTION X3-CLASS |
More Detail: | N-Channel 300V 56A (Tc) 320W (Tc) Through Hole TO-... |
DataSheet: | IXFP56N30X3 Datasheet/PDF |
Quantity: | 724 |
1 +: | $ 4.72500 |
50 +: | $ 3.79814 |
100 +: | $ 3.46059 |
500 +: | $ 2.80223 |
1000 +: | $ 2.36332 |
Vgs(th) (Max) @ Id: | 4.5V @ 1.5mA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 320W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3.75nF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 56nC @ 10V |
Series: | HiPerFET™ |
Rds On (Max) @ Id, Vgs: | 27 mOhm @ 28A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 56A (Tc) |
Drain to Source Voltage (Vdss): | 300V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXFP56N30X3 is a N-channel Power MOSFET from IXYS. It is a high voltage device with a flat reverse transfer characteristic and an exceptionally fast switching beta as well as low on resistance.
In terms of applications, the IXFP56N30X3 is often used in synchronous rectification. It is also used for freewheeling diode for low voltage applications, low power PFC and lowside configurations, and for light dimming.It has a large variety of different applications due to its wide range of performance characteristics.
In terms of its working principle, the IXFP56N30X3 operates on the principle of metal-oxide-semiconductor field-effect transistor (MOSFET) technology. It is a type of transistor that consists of three terminals; a source, a gate, and a drain. When a voltage is applied to the gate, it controls the current flowing through the drain and the source. This is because the gate voltage creates an electric field that changes the current-carrying capacity of the device, thus controlling the current flow.
The IXFP56N30X3 is a high voltage MOSFET with a nominal breakdown voltage of 300V, making it suitable for a wide variety of applications. It also has a low on resistance of just 0.76 Ω at 10V and a maximum drain current of 30A. It is also capable of switching frequencies up to 1 MHz and has a high frequency transient response that allows for fast switching in high speed circuits.
In addition, the IXFP56N30X3 has an exceptionally fast switching beta (<0.4V/ns). This feature provides for faster switching times and more reliable circuit operation. Additionally, it has a low reverse transfer capacitance and a flat reverse transfer characteristic, making it well-suited for applications such as synchronous rectification and light dimming.
Overall, the IXFP56N30X3 is a versatile and reliable device that can be used in a wide range of industrial and consumer applications. Its high voltage, low leakage, and fast switching capabilities make it a viable choice for many circuits. In addition, its low cost and ease of use make it a popular choice for designers looking for an economical and reliable solution for their circuit needs.
The specific data is subject to PDF, and the above content is for reference
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IXFP14N60P3 | IXYS | 2.23 $ | 54 | MOSFET N-CH 600V 14A TO-2... |
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IXFP20N50P3 | IXYS | -- | 90 | MOSFET N-CH 500V 8A TO220... |
IXFP16N50P3 | IXYS | 2.97 $ | 100 | MOSFET N-CH 500V 16A TO-2... |
IXFP16N60P3 | IXYS | 3.07 $ | 84 | MOSFET N-CH 600V 16A TO-2... |
IXFP30N25X3M | IXYS | 3.3 $ | 1000 | MOSFET N-CHANNEL 250V 30A... |
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IXFP4N85X | IXYS | -- | 35 | MOSFET N-CH 850V 3.5A TO2... |
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IXFP60N25X3 | IXYS | 4.98 $ | 74 | MOSFET N-CH 250V 60A TO22... |
IXFP60N25X3M | IXYS | 5.03 $ | 92 | MOSFET N-CH 250V 60A TO22... |
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IXFP36N20X3 | IXYS | 2.52 $ | 102 | 200V/36A ULTRA JUNCTION X... |
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