IXFP34N65X2 Allicdata Electronics
Allicdata Part #:

IXFP34N65X2-ND

Manufacturer Part#:

IXFP34N65X2

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 650V 34A TO-220
More Detail: N-Channel 650V 34A (Tc) 540W (Tc) Through Hole TO-...
DataSheet: IXFP34N65X2 datasheetIXFP34N65X2 Datasheet/PDF
Quantity: 400
Stock 400Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 540W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3330pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Series: HiPerFET™
Rds On (Max) @ Id, Vgs: 105 mOhm @ 17A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXFP34N65X2 is a single high-side power field-effect transistor (FET) designed for automotive and industrial applications. This advanced semiconductor device is designed to save power and increase efficiency in a wide range of electronic systems, allowing engineers more design freedom. In this article, we’ll review the IXFP34N65X2’s application field and its working principle.

IXFP34N65X2 Application Field

The IXFP34N65X2 has been designed for use in industrial and automotive applications, and it is suitable for a wide range of harsh environment applications, including:

  • Automotive systems, such as power steering, automotive power windows, and power mirrors
  • Factory automation and robotics
  • Construction machinery
  • Utility and renewable energy systems, such as wind turbines and solar panels
  • Military and aerospace applications

In addition to its wide range of applications, the IXFP34N65X2 is a high-volume product with good product availability, low price and easy access to global sales and support.

IXFP34N65X2 Working Principle

The IXFP34N65X2 is a single high-side power FGET with a low gate charge and fast gate-charging delays, making it the perfect choice for high-speed switching applications. It is designed for maximum on-state current capability, with excellent heat dissipation capabilities. This makes it ideal for high-current systems, such as LED lighting, motor control, and power electronics.

The IXFP34N65X2 also features state-of-the-art protection features, including a comprehensive integrated circuit protection system that can sense overtemperature and overload conditions, and respond accordingly to protect the device.

The IXFP34N65X2 has a low on-resistance of 8.1mΩ, which enables it to achieve high efficiency, low power dissipation and a high degree of control over the power supply. The high-speed switching capability also offers excellent noise immunity, which is essential for applications in harsh environment.

Conclusion

The IXFP34N65X2 is an advanced single high-side power FET designed for automotive and industrial applications. It is capable of supporting a high current capacity, with excellent heat dissipation capabilities. It also offers fast switching and noise immunity, along with protection features. The IXFP34N65X2 is an ideal choice for a variety of automotive, industrial, and military applications.

The specific data is subject to PDF, and the above content is for reference

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