Allicdata Part #: | IXFP20N85X-ND |
Manufacturer Part#: |
IXFP20N85X |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | 850V/20A ULTRA JUNCTION X-CLASS |
More Detail: | N-Channel 850V 20A (Tc) 540W (Tc) Through Hole TO-... |
DataSheet: | IXFP20N85X Datasheet/PDF |
Quantity: | 37 |
Vgs(th) (Max) @ Id: | 5.5V @ 2.5mA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 540W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1660pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 63nC @ 10V |
Series: | HiPerFET™ |
Rds On (Max) @ Id, Vgs: | 330 mOhm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
Drain to Source Voltage (Vdss): | 850V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXFP20N85X is a Static Induction Transistor (SIT) manufactured by IXYS Corporation. It is a high-voltage device that is used in applications such as power supplies, inverters, amplifiers, and motor controllers. It is one of the few devices that can handle high voltage, low gate current, and high current ratings. TheIXFP20N85X has a number of features that make it a desirable device for many applications, including high-voltage operation, low gate current, and high current-handling capability.
The IXFP20N85X is designed to be a low-power transistor that can perform both switching and linear operations. It has an N-channel design, meaning it has two source and sink connections that help to control the current flow. The device is controlled by a gate voltage, which regulates the amount of current that is allowed to flow between the source and sink.
The IXFP20N85X has a number of applications in motor control, power supplies, and amplifiers. It has a maximum breakdown voltage of 20 kV, which makes it useful for high-voltage applications. The low-gate-current efficiency of the device also makes it useful for low power applications. The IXFP20N85X is also capable of handling high current ratings, up to 25 A.
The IXFP20N85X has a number of features that make it a desirable device for many applications. It has a low on-resistance, which makes it suitable for high-power applications. Its maximum operating temperature is +125°C, which makes it suitable for hot environments. The device also has a high voltage withstanding capability, which makes it useful for applications that require a high voltage margin.
The working principle of the IXFP20N85X is based on the principle of static induction. In this principle, current flow is induced in an N-channel device, such as the IXFP20N85X, by the application of a voltage to the gate of the device. When the gate voltage is applied, current flows from the source region of the device to the drain region. This current creates a magnetic field, which then induces a voltage in the channel region, which creates a voltage across the channel and causes current to flow from the channel to the drain region.
The IXFP20N85X is a versatile device with a number of features that make it suitable for a wide range of applications. Its high-voltage operation and low gate current enable it to be used in high-voltage, low-power applications. Its high current rating makes it suitable for high-power applications. The IXFP20N85X is an ideal device for applications requiring a reliable, high-voltage, low-power device.
The specific data is subject to PDF, and the above content is for reference
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