IXFP90N20X3M

Gate Charge (Qg) (Max) @ Vgs:	78nC @ 10V
Package / Case:	TO-220-3
Supplier Device Package:	TO-220
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	36W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	5420pF @ 25V
Vgs (Max):	±20V
Series:	HiPerFET™
Vgs(th) (Max) @ Id:	4.5V @ 1.5mA
Rds On (Max) @ Id, Vgs:	12.8 mOhm @ 45A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	90A (Tc)
Drain to Source Voltage (Vdss):	200V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active

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The IXFP90N20X3M is a power MOSFET (metal-oxide-semiconductor field-effect transistor) transistor from International Rectifier that features a P-channel of 90A (D-S), 20V (D-S), and 3mΩ (RDS(on)). It is most commonly used in the automotive and commercial LED lighting industry, and can also be used in general purpose and SMPS (switch mode power supply) applications.The IXFP90N20X3M is part of the IXFF family, which includes a series of power MOSFETs. The IXFF family of power MOSFETs has been designed for use in high frequency, high current switching applications and offer a variety of features, including low on-state resistance, fast switching speed, and low gate charge.The IXFP90N20X3M features a drain-to-source voltage rating of 20V, a drain current of 90A, a continuous drain current of 2A, a gate threshold voltage of 2.8V and a power dissipation of 35W @ Tc = 25°C. It also has a “user friendly” package design with a “drop-in” replacement, which makes installation and replacement easy and reliable.The IXFP90N20X3M works by allowing electric current to flow between the source and the drain when a voltage is applied to the gates. This is known as the “MOSFET operation” and is based on the interaction between the metal oxide and the semiconductor material of the device. This device has an input capacitance of 262pF at VGS = 10V and a gate-source capacitance of 6.6pF at VGS = 10V.The IXFP90N20X3M offers a number of advantages, including the ability to provide high switching speed, low on-state resistance and low gate charge. It is also highly reliable and can operate over a wide temperature range. It has a safe operating area (SOA) which is a graph that demonstrates the rate of increase of the drain-to-source voltage as the drain current increases. This is important as it limits the maximum reverse recovery time, which is the time required to switch off the device after it has been triggered.Due to its low on-state resistance and fast switching characteristics, the IXFP90N20X3M is most commonly used in automotive and commercial LED lighting, general purpose and switch mode power supply applications. Its ability to transfer electric current between the source and the drain makes it ideal for these applications as it offers high performance with low power consumption. It is also capable of operating in harsh environmental conditions and can withstand high-current spikes.The IXFP90N20X3M completes International Rectifier’s range of power MOSFETs and provides customers with a reliable and cost effective solution for their application. It is designed to provide high performance, low power consumption and an easy to install package that make it an ideal choice for a variety of applications.

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