| Allicdata Part #: | IXFP16N50P3-ND |
| Manufacturer Part#: |
IXFP16N50P3 |
| Price: | $ 2.97 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 500V 16A TO-220 |
| More Detail: | N-Channel 500V 16A (Tc) 330W (Tc) Through Hole TO-... |
| DataSheet: | IXFP16N50P3 Datasheet/PDF |
| Quantity: | 100 |
| 1 +: | $ 2.69640 |
| 50 +: | $ 2.16808 |
| 100 +: | $ 1.97536 |
| 500 +: | $ 1.59956 |
| 1000 +: | $ 1.34902 |
| Vgs(th) (Max) @ Id: | 5V @ 2.5mA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 330W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1515pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 29nC @ 10V |
| Series: | HiPerFET™, Polar3™ |
| Rds On (Max) @ Id, Vgs: | 360 mOhm @ 8A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 16A (Tc) |
| Drain to Source Voltage (Vdss): | 500V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IXFP16N50P3 is a N-Channel Enhancement mode MOSFET. It is one of a family of discrete power MOSFETs from IXYS Diodes and Rectifiers. This MOSFET has an Idss, Drain-Source On-State Resistance RDS(on) of 9.2 mOhms at 10 V with a package size of 3x3mm making it a good choice for a wide variety of applications.
The IXFP16N50P3 is designed specifically for applications where high performance, small size, and low on-resistance are required. MOSFETs are generally used in switches, linear voltage regulators, high voltage analog circuits, and other high performance applications.
This MOSFET\'s working principle is simple and straightforward. The gate voltage (Vgs) controls the current flowing between the source and the drain. When the gate voltage is below the threshold voltage (Vth), the MOSFET will remain off, allowing no current to flow. When the gate voltage increases above the threshold voltage, the MOSFET will turn on, allowing current to flow.
The main advantages of the IXFP16N50P3 are its small size, low voltage and low power requirements, and its ability to switch high currents. It is commonly used in DC–DC converters, motor drivers, and switching power supplies. The device can also be used in audio amplifiers, data converters, and instrumentation amplifiers due to its low on–resistance and high switching speed.
The IXFP16N50P3 is also a good choice in high–density, high–speed applications on printed circuit boards. Its small size allows it to be incorporated into densely populated circuit boards. Its low on–resistance ensures it won\'t draw too much current, while its high speed ensures it can quickly turn on and off without creating too much voltage drop.
In addition to its applications in analog circuit design, the IXFP16N50P3 is also a useful device for digital circuit design. It can be used as a switch to route or inhibit signals, or to provide power to a portion of the circuit. The low on–resistance of the device can also be used to provide higher drive current to higher combination logic gates.
The IXFP16N50P3 is an extremely versatile, high performance MOSFET. Its small size and high current carrying capacity make it a perfect choice for a wide variety of applications. The device\'s low on-resistance, high speed, and low threshold voltage make it well suited for use in high performance analog and digital circuit designs.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
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| IXFP16N50P | IXYS | -- | 289 | MOSFET N-CH 500V 16A TO-2... |
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| IXFP12N50P | IXYS | 1.81 $ | 1000 | MOSFET N-CH 500V 12A TO-2... |
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IXFP16N50P3 Datasheet/PDF