IXFP16N60P3

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The IXFP16N60P3 is a high cell density, low gate charge, high frequency, and N-channel Power MOSFET. It\'s designed specifically for use in power conversion applications like AC-to-DC converters, DC-to-DC converters, and full bridge converters. The IXFP16N60P3 has the advantages of a low on-resistance per area, fast switching speeds, low input capacitance, and a high-current capability. This makes it a popular choice for applications that require high levels of efficiency, dynamic performance, and overall performance.

The IXFP16N60P3 is a field-effect transistor (FET) device, a type of semiconductor. FETs are an important type of transistor due to their high frequency, low input capacitance characteristics. FETs are composed of three terminal nodes on their small, flat surface. One of these terminals is the source, another is the gate, and the third is the drain. FETs can be either n-channel or p-channel, and they are used in both analog and digital circuits. In an FET, the current flow from the source to the drain is controlled by the voltage on the gate.

MOSFETs are a type of FETs. MOSFETs are metal-oxide-semiconductor field-effect transistors. A MOSFET is composed of a two-dimensional conducting channel between two metal-oxide layers, with an insulated gate placed above the channel. It is controlled by varying the amount of electric charge on the gate electrode. When a voltage is applied to the gate, this changes the electric field between the gate and the channel, which in turn changes the current flow through the channel.

The IXFP16N60P3 is a single-level N-channel Power MOSFET. It has a breakdown voltage rating of 600V and a drain-source on-state resistance of 0.0016Ω. It has an exquisite thermal resistance to provide an optimal power dissipation in your applications. The low input capacitance allows for fast switching speeds, with switching losses being kept to a minimum.

The IXFP16N60P3 is ideal for a wide range of applications such as servers, power supplies, solar inverters, switch mode power supplies, DC-DC converters, motor control, and UPS systems. It is also well suited for LED lighting, motor control, and other high-current applications.

The working principle of the IXFP16N60P3 is to use the electron mobility to control the current flow. When a voltage is applied to the gate, this creates an electric field that induces a change in the electron mobility, altering the resistance between the source and drain. The electron mobility will increase and decrease depending on the amount of voltage applied to the gate, resulting in a decrease in current flow when the voltage is increased, or an increase in current flow when the voltage is decreased.

At WEGO, we provide IXFP16N60P3 MOSFETs with a wide range of features, benefits, and applications, making them the perfect choice for your heavy-duty industrial and commercial needs. Our selection of IXFP16N60P3 MOSFETs is manufactured to the highest quality standards and comply with the RoHS directive.

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