IXFP8N85X Allicdata Electronics
Allicdata Part #:

IXFP8N85X-ND

Manufacturer Part#:

IXFP8N85X

Price: $ 1.98
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 850V 8A TO220AB
More Detail: N-Channel 850V 8A (Tc) 200W (Tc) Through Hole TO-2...
DataSheet: IXFP8N85X datasheetIXFP8N85X Datasheet/PDF
Quantity: 28
1 +: $ 1.79550
50 +: $ 1.44900
100 +: $ 1.30410
500 +: $ 1.01430
1000 +: $ 0.84042
Stock 28Can Ship Immediately
$ 1.98
Specifications
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB (IXFP)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 200W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 654pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Series: HiPerFET™
Rds On (Max) @ Id, Vgs: 850 mOhm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 850V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXFP8N85X is an enhancement mode power MOSFET transistor designed to handle up to 8.5 A and up to 60 V and has a very low on-resistance area. The transistor has a high threshold voltage and an N-channel structure. It is manufactured using advanced power MOSFET technology and designed to work in high frequency applications.

The IXFP8N85X transistor has a wide variety of uses in the electronics world. It can be used in small automotive electronics and consumer applications for switching power and amplifying electrical signals. The IXFP8N85X has a good drain-source voltage rating and can be used for high frequency circuits, such as power amplifiers, power supplies, LED drivers and switching converters. It is also used in consumer electronics such as cameras, camcorders and audio systems and can be used for current switching in telecom and power equipment, including servers and other general-purpose switching applications.

The IXFP8N85X transistor is a voltage-controlled device, which means that the current flow through the transistor is controlled by the voltage applied to its gate terminal. The current is controlled by applying a voltage to the gate and this voltage can be generated by an external driver circuit or by a digital signal processor. The amount of current that can be switched on or off by the transistor depends on the voltage applied to the gate. The voltage level of the gate voltage determines the conductance of the transistor, which is the amount of current that flows through the transistor.

The IXFP8N85X has a low-capacitance structure and a fast switching speed, which enables the device to switch in high frequency applications. The device has a low gate-to-drain charge and a low gate-source capacitance, which give it low gate-to-source resistance and an increased switching speed. The device also has a low RDS(on) voltage drop and a low gate-to-source resistance, which enables it to handle higher power, making it suitable for high current applications.

The IXFP8N85X transistor has a low input capacitance and can operate over a wide temperature range from -40°C to +150°C. The low junction capacitance makes the device well-suited for high frequency applications and it is immune to switching random noise. The device has a low gate threshold voltage, which makes it easy to operate in frequencies up to 100 MHz.

The IXFP8N85X transistor is an excellent choice for applications requiring a high-speed, low-on-resistance device. It is an ideal choice for a wide variety of applications, ranging from automotive electronics to consumer applications. The device\'s low input capacitance, low on-resistance, high temperature operation and fast switching speed make it the perfect choice for high speed switching and amplification applications.

The specific data is subject to PDF, and the above content is for reference

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