IXFP56N30X3M

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IXFP56N30X3M is a part of the new class of specialized transistors, known as Field Effect Transistors (FETs). It is a Single type of FET, with Wide Drain Current (9A), Low On-Resistance (17mΩ) and an Ultra-Low Capacitance (3.7pF). This high-performance FET has become a popular choice for power amplifier designs and is already used in many audio and communication applications.

This particular FET was originally designed for use in applications such as switching power supplies, amplifiers, and low noise filters. It can also be used in other applications such as low or high voltage switching, voltage regulation, frequency division, and high-speed logic gates. IXFP56N30X3M is an ideal choice for filtering and switching circuit designs that require low Rds(on), low capacitance, and high breakdown voltage.

IXFP56N30X3M consists of two active components: the drain and source terminals. The drain and source terminals are connected to a base terminal via the N-channel MOSFET. When a positive current is applied to the Gate terminal, a channel of electrons forms in the device and the Gate-Source voltage rises, allowing current to flow from the Drain to the Source. This is known as the Single FET type of FET.

The gate terminal is where the voltage applied by the user controls the conductivity of the channel. The higher the Gate-Source voltage, the more current can flow through the channel and the higher the current is. The same principle applies to the Drain-Source voltage, with the same effect increasing the current. This FET is suitable for use in applications requiring high speed and high power switching, as it offers a fast turn-off time of less than 15ns, low Gate-Source capacitance, and no shoot-through current protection.

The IXFP56N30X3M has a maximum operating temperature range of 150°C, which makes it suitable for use in high-temperature environments. Its wide operating temperature range and low on-resistance make it ideal for use in industrial motor control, power supply and HID lighting solutions. The IXFP56N30X3M also has built-in latch-up protection of up to 250V, ensuring it is suitable for high-voltage environments.

The IXFP56N30X3M is one of the highest-performing field effect transistors available today. It can be used in a wide range of applications that require fast switching, low power consumption, and higher currents than the traditional Bipolar Junction Transistors (BJT). This FET is particularly useful for applications that require a high level of noise suppression and switching speed, as its design ensures low noise due to its ultra-low capacitance and low on-resistance. This FET is also suitable for use in applications requiring high-voltage protection due to its latch-up protection.

The specific data is subject to PDF, and the above content is for reference