Vgs(th) (Max) @ Id:	5V @ 1.5mA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	200W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1050pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	39nC @ 10V
Series:	HiPerFET™
Rds On (Max) @ Id, Vgs:	4.5 Ohm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	3A (Tc)
Drain to Source Voltage (Vdss):	1200V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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IXFP3N120 Application Field and Working Principle

Introduction

The IXFP3N120 is a fast-switching, low-voltage powered insulated gate bipolar transistor (IGBT) module. It is a type of field-effect power transistor with a voltage range usually to 600V. Commonly used in medium-voltage range applications such as motor control, elevator control, and switching power supplies, the IXFP3N120 is designed to limit the power dissipation while providing fast switching and voltage protection. In this article, we will discuss the application field and working principle of the IXFP3N120.

Application Field

The IXFP3N120 module is primarily used in applications such as motor control, power supplies, elevators, industrial welding, telecom and aerospace applications. It is capable of achieving high frequency switching and voltage protection and is capable of operating at high temperatures. It is a reliable device that can be used in a variety of applications.In motor control applications, the IXFP3N120 can be used to control the speed and direction of a motor. By controlling the voltage and current of the motor using the module, the motor can be operated efficiently and reliably. The IXFP3N120 is also well-suited for elevator control applications, as it can provide quick switching times and voltage protection.The IXFP3N120 module is also used in telecommunication applications such as switching power supplies, broadcasting students, electric and pneumatic line transducers, and communication power supplies. It is also used in aerospace applications such as inverters, electric drives, alternators, and other electric power systems.

Working Principle

The IXFP3N120 is an insulated gate bipolar transistor (IGBT) module. It works on two principles – the bipolar junction principle, and the insulated gate principle. In the bipolar junction principle, the device has two legs – a collector and an emitter. The collector is connected to a positive voltage and the emitter is connected to a negative voltage. As current flows in the device, a voltage is generated across the collector and the emitter.The insulated gate principle works by using a gate voltage to control the amount of current that can flow in the device. By changing the voltage of the gate, the amount of current that can flow in the device can be increased or decreased.

Conclusion

The IXFP3N120 module is a versatile and reliable IGBT module that can be used in a variety of applications. It is capable of high frequency switching and voltage protection and is suitable for applications such as motor control and elevator control. It works on two principles – the bipolar junction principle, and the insulated gate principle. By using the gate voltage to control the amount of current that can flow in the device, the IXFP3N120 is able to provide efficient and reliable performance.

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