IXFP4N60P3

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IXFP4N60P3 is an enhancement mode MOSFET designed for high performance power switching applications. It is a high voltage, low gate threshold voltage field-effect transistor which utilizes advanced trench technology to provide significant improvements in the power switching speed and switching energy. IXFP4N60P3 is housed in a TO-220AB package and comes with a and leads. It provides high electrical isolation between the drain and source, making it suitable for various high-inductance, low current applications.

Application Field of IXFP4N60P3

IXFP4N60P3 is specially designed for high frequency power switching circuits in AC/DC and DC/DC switching systems. It has a 100V drain-source breakdown voltage, a 6A continuous drain current up to a max. voltage of 55V and a 4A continuous drain current up to a max. voltage of 100V, making it suitable for large power supply systems, motor drives and DC/DC switching converters. With the maximum operating temperature of 150ºC, IXFP4N60P3 is well-suited for high temperature or harsh environment applications where high reliability and robustness are required.

Working Principle of IXFP4N60P3

IXFP4N60P3 utilizes the principle of Field-Effect Transistor (FET) to control the current that flows from the source to the drain. When a voltage is applied to the gate, it creates an electric field inside the channel of the transistor that attracts the electrons from the source to the drain. This causes the electrons to flow through the channel and out the drain, resulting in a current flow. The voltage applied to the gate determines the strength of the electric field, and hence the amount of current that is allowed to flow between the source and the drain. Due to its internal structure, IXFP4N60P3 operates more efficiently and quickly than a bipolar junction transistor and can handle voltages of up to 100V.

Conclusion

IXFP4N60P3 is a high voltage, low gate threshold voltage field-effect transistor specifically designed for high performance power switching applications. It provides a 100V drain-source breakdown voltage, a 6A continuous drain current up to 55V and a 4A continuous drain current up to 100V, making it ideal for use in high voltage power supply systems, motor drives and DC/DC switching converters. IXFP4N60P3 utilizes the principle of FET where an electric field is created in the channel to attract electrons from the source to the drain in order to allow a current to flow, making it much more efficient and faster than a bipolar junction transistor.

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