Allicdata Part #: | IXFP72N20X3M-ND |
Manufacturer Part#: |
IXFP72N20X3M |
Price: | $ 5.20 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | 200V/72A ULTRA JUNCTION X3-CLASS |
More Detail: | N-Channel 200V 72A (Tc) 36W (Tc) Through Hole TO-2... |
DataSheet: | IXFP72N20X3M Datasheet/PDF |
Quantity: | 45 |
1 +: | $ 4.72500 |
50 +: | $ 3.79814 |
100 +: | $ 3.46059 |
500 +: | $ 2.80223 |
1000 +: | $ 2.36332 |
Gate Charge (Qg) (Max) @ Vgs: | 55nC @ 10V |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 36W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3780pF @ 25V |
Vgs (Max): | ±20V |
Series: | HiPerFET™ |
Vgs(th) (Max) @ Id: | 4.5V @ 1.5mA |
Rds On (Max) @ Id, Vgs: | 20 mOhm @ 36A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 72A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
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The IXFP72N20X3M is a replacement MOSFET (metal-oxide semiconductor field-effect transistor) designed for unit protection of the low load current circuits. It has an on-resistance of only 0.041 ohms and an on-state current of up to 25 amp. It’s designed to be used in potential voltage drops of up to 32V, with an on-state gate drive of a minimum of 10 mA.
The IXFP72N20X3M is a single drain MOSFET, meaning it has only one drain terminal. This type of MOSFET has its gate (control terminal) connected to the drain, allowing the device to be used in numerous applications. It can be used as an electronic switch to control the flow of electrons, allowing them to pass through the drain-gate junction. This type of MOSFET is often used in short-circuit protection circuits, as it acts as a switch to break the circuit when a low-impedance fault occurs.
The IXFP72N20X3M’s working principle is based on the operation of metal-oxide-semiconductor (MOS) capacitors. The metal-oxide layer between the gate and drain terminals is the dielectric material that separates the two metal electrodes. When the gate terminal is held at a negative potential, the oxide layer prevents the movement of electrons from the drain-gate junction and thereby prevents current from flowing from the drain to the gate. When the gate potential is raised to a positive potential, the oxide layer is no longer able to prevent the movement of electrons, allowing current to flow from the drain to the gate.
The IXFP72N20X3M can be used in many applications. It is an excellent choice for protection circuits that need low-impedance fault detection. It is also often used in power distribution, converters, and voltage regulators, due to its excellent low-impedance characteristics and low on-state resistance. Its low on-state resistance makes it ideal for circuit protection systems that need to detect small current loads.
The IXFP72N20X3M is a great choice for applications that need short-circuit protection, as its low on-state resistance enables very fast switching. Additionally, the low on-state resistance reduces the amount of power wasted in the circuit. The IXFP72N20X3M is a reliable and efficient MOSFET for a variety of applications and is a great choice for use in power control, motor control, and lighting control applications.
The specific data is subject to PDF, and the above content is for reference
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