Allicdata Part #: | IXFP22N60P3-ND |
Manufacturer Part#: |
IXFP22N60P3 |
Price: | $ 3.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 600V 22A TO220AB |
More Detail: | N-Channel 600V 22A (Tc) 500W (Tc) Through Hole TO-... |
DataSheet: | IXFP22N60P3 Datasheet/PDF |
Quantity: | 80 |
1 +: | $ 2.75940 |
50 +: | $ 2.21697 |
100 +: | $ 2.01991 |
500 +: | $ 1.63563 |
1000 +: | $ 1.37945 |
Vgs(th) (Max) @ Id: | 5V @ 1.5mA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 500W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2600pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 38nC @ 10V |
Series: | HiPerFET™, Polar3™ |
Rds On (Max) @ Id, Vgs: | 360 mOhm @ 11A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 22A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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IXFP22N60P3 is a highly efficient, fast switching, and rugged MOSFET device which is designed for use in high temperature, high voltage, low RDS(ON) applications such as solar inverters and motor drives. This MOSFET is ideal for switch-mode power-conversion and high frequency switching applications due to its low gate charge and improved ESD performance. The device provides an optimized balance of power dissipation, gate charge, switch time and RDS(ON) with the added benefit of low gate drive. It is protected from gate oxide breakdown, thermal runaway, and short circuit conditions by integrated self-limiting Avalanche immunity and gate-current foldback.
The IXFP22N60P3 basically consists of three terminals: the drain, the gate, and the source. The drain terminal is the primary supply voltage terminal, and the gate is used to regulate the flow of electrons through the device. The source is connected to the return terminal of the power circuit. All three terminals are connected together internally when the device is in its on state at the operating voltage. When the gate voltage is higher than the threshold voltage of the MOSFET, the device is activated and current can flow between the source and drain, allowing the device to act as a switch.
The IXFP22N60P3 is built to operate efficiently in high-voltage and high-current applications, such as solar inverters and motor drives. Due to its fast switching characteristics, it provides useful capabilities in control, protection, and power exchange. Its low gate charge and ESR also make it a very efficient power switch, allowing a high frequency of switching.
In an applications like solar inverter, the IXFP22N60P3 can be used to control the charge and discharge of the battery and the flow of current from the solar panel to the inverter. Its fast switching capability also allows for accurate tracking of the maximum power point from the solar panel and provides enhanced system reliability and efficiency. In motor drives, the IXFP22N60P3 can be used to control the current flow to the motor, along with providing protection for the device.
In addition to its power handling capabilities, the IXFP22N60P3 also offers additional features to enhance its performance further. These features include integrated self-limiting Avalanche immunity, gate-current foldback, thermal shutdown protection, low gate drive, and soft turn-on. With these added features, the device delivers superior protection, reliability, and energy efficiency in power-conversion and switching applications.
The specific data is subject to PDF, and the above content is for reference
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