IXFP4N100Q

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IXFP4N100Q Application Field and Working Principle

The IXFP4N100Q is a part of the IXFN4N100(Q) family of CoolMOS Power Transistors from Infineon. It is a high-voltage N-Channel Field effect transistor (FETs) offering a very low on-state resistance (RDS(on)). It is designed to be used in a variety of applications such as switching converters, power management and lighting. This article will provide a brief overview of the IXFP4N100Q application field and working principle.

IXFP4N100Q Application

The IXFP4N100Q has a high dielectric strength of up to 4.2kV. This makes it well-suited for applications where high voltage is of paramount importance. It can be used in a variety of applications such as Uninterruptible Power Supplies (UPS), Automotive/Industrial Inverters, AC/DC Power Supplies, Lighting Controls, Motor Control Applications and more.

IXFP4N100Q Working Principle

The IXFP4N100Q is an N-Channel Field effect transistor (FETs). It has a relatively low on-state resistance of 17.8mΩmax @ 10V VGS in boosting applications. It is built using advanced MOSFET technology which balances high performance and low cost. As with all FETs, the IXFP4N100Q works by using a gate voltage to control the unsaturated electrical potential. This is essentially how current is conducted in the device. The transistor will draw current from the gate only when the gate voltage is high enough to create an electric field between the gate and the source. This electric field will change the conductance of the device, allowing current to flow through the source and drain.

Conclusion

The IXFP4N100Q is a high-voltage N-Channel Field effect transistor (FETs) which is designed to be used in a variety of applications. Its high dielectric strength makes it perfect for applications where high voltage is of paramount importance. It is built using advanced MOSFET technology which offers high performance and low cost. It works by using a gate voltage to control the unsaturated electrical potential, allowing current to flow from the source and drain when the gate voltage is high enough.

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