IXFP7N80PM

Vgs(th) (Max) @ Id:	5V @ 1mA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	50W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1890pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	32nC @ 10V
Series:	HiPerFET™, PolarHT™
Rds On (Max) @ Id, Vgs:	1.44 Ohm @ 3.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	3.5A (Tc)
Drain to Source Voltage (Vdss):	800V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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The IXFP7N80PM is a depletion-mode unit of field effect transistors designed for use in various electronic applications. It belongs to a class of FETs, which are also known as metal oxide semiconductors or MOSFETs. MOSFETs are one of the most commonly used transistors in the modern world, particularly in computer and television circuits.The IXFP7N80PM is a single FET device which is well-suited for use in high-density integrated circuit design. It offers many advantages over other types of transistors, including better performance and stability, less power consumption, and decreased propagation delay. It is particularly ideal in medium to high powered switching applications in consumer electronics, automotive, and industrial applications.The working principle of the device is fairly simple and easy to understand. It consists of three terminals called source, gate, and drain. An electric charge is applied to the source terminal, and this causes the gate terminal to convert some of the charge into an electrical field. This field then modulates the conductivity of the channel between the source and the drain, allowing current to flow. This is essentially how the device works, allowing for the process of amplification, switching, and voltage regulation.There are a number of features and benefits of the IXFP7N80PM, which make it potentially ideal for a wide range of applications. It offers a wide gate voltage range of -4.5V to +7V, giving it excellent temperature stability. It also has a high input impedance, a low threshold voltage, and can easily handle tens of thousands of operational cycles. All these features make the IXFP7N80PM suitable for applications such as switching power supplies, DC/DC converters, motor control, and power supply management.The device is also optimized for use in AC circuits, making it ideal for power supplies and speed control applications. It has an excellent frequency response, allowing for high speed operation without causing any interference. Additionally, it offers excellent current and voltage handling capabilities. This makes it an ideal choice for use in AC and DC circuits, as it can efficiently handle both the voltage and current when switching or regulating.In conclusion, the IXFP7N80PM is a versatile and highly-capable transistor device that offers a wide range of features and benefits for use in a variety of applications. It is a depletion-mode FET that is suitable for both high and low powered applications, and its features make it especially well-suited for use in medium to high powered switching, speed control, motor control, and power management applications. Its excellent properties and performance make it a popular choice for supporting various electronic applications.

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