| Allicdata Part #: | IXFT16N80P-ND |
| Manufacturer Part#: |
IXFT16N80P |
| Price: | $ 4.72 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 800V 16A TO-268 |
| More Detail: | N-Channel 800V 16A (Tc) 460W (Tc) Surface Mount TO... |
| DataSheet: |  IXFT16N80P Datasheet/PDF |
| Quantity: | 1000 |
| 30 +: | $ 4.24767 |
| Vgs(th) (Max) @ Id: | 5V @ 4mA |
| Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
| Supplier Device Package: | TO-268 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 460W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 4600pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 71nC @ 10V |
| Series: | HiPerFET™, PolarHT™ |
| Rds On (Max) @ Id, Vgs: | 600 mOhm @ 500mA, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 16A (Tc) |
| Drain to Source Voltage (Vdss): | 800V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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An IXFT16N80P is a type of Field-Effect Transistor (FET) used in a variety of electronic and electrical applications. It belongs to a category of MOSFETs, specifically in the single type category. A MOSFET is a type of FET that utilizes Metal Oxide Semiconductor (MOS) technology for the creation of an insulated electromechanical field effect.
The IXFT16N80P is a surface-mountable device. This means that it can be placed directly onto the surface of a circuit board or similar part without the need for any additional components. Furthermore, it is also highly resistant to ESD, or Electrostatic Discharge, making it ideal for high-risk environments.
The IXFT16N80P has a wide range of electrical and mechanical characteristics. It is capable of sustaining gate voltages of up to +20 V operating temperature range of between -55 and +125 degrees Celsius. It also has a breakdown voltage of 600V, a maximum drain current of 16Amps, and a drain-source on resistance of 0.06ohm.
When it comes to application field, the IXFT16N80P can be used in a range of different areas. It has the potential to be used in motors, lighting fixtures, switch mode power supplies and HVAC systems. It is often used in the form of power switches. This means it is used to turn on and off power to different parts of an electrical circuit.
The working principle of the IXFT16N80P is based on utilizing an insulating oxide layer sandwiched between two semiconductor layers to create a channel of electrical current. This current is regulated by the voltage applied across the gate of the semiconductor. When the voltage at the gates is increased, the current subsequently increases. The IXFT16N80P is therefore able to regulate current in both directions.
The IXFT16N80P is becoming increasingly popular for its reliability and performance. Its flexibility in a range of applications makes it a great choice for companies who require a reliable power switch. Its resistance to ESD is also an attractive feature of this transistor and is likely to be an increasingly attractive factor for customers in the future.
The specific data is subject to PDF, and the above content is for reference
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