IXFT69N30P

Vgs(th) (Max) @ Id:	5V @ 4mA
Package / Case:	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device Package:	TO-268
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	500W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	4960pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	180nC @ 10V
Series:	PolarHT™ HiPerFET™
Rds On (Max) @ Id, Vgs:	49 mOhm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	69A (Tc)
Drain to Source Voltage (Vdss):	300V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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The IXFT69N30P is a manufacturable and economical device used mainly in the electronics industry. It is a N-channel insulated gate field effect transistor (IGFET) manufactured to provide a high power capability, superior power efficiency, and a high operating temperature range.The IXFT69N30P is designed and fabricated using a planar silicon N-channel power MOSFET. It is especially suitable for use in higher-power designs and for high temperature applications. This device also has a low input capacitance, low gate threshold voltage, and low on-state resistance.An insulated gate field effect transistor is an advanced electronic semiconductor device. A power MOSFET is a type of insulated gate field effect transistor (IGFET) that contains an insulated gate electrode and can handle the lower on-state resistance and high power dissipation of high current circuits.The operation of an IGFET is based on a principle referred to as the "field effect". This effect is created when an external electric field is introduced, which creates a generation or depletion of electrons and holes, depending on the polarity of the field as well as the doping of the semiconductor material.When a voltage is applied to the gate of an IGFET, a "gate electric field" is created, which modifies the conductance between the source and drain of the device. Hence, by applying a suitable gate voltage, the device can be switched on or off, resulting in a controlled current between the two terminals. These devices are highly efficient and the quantity of current going through them can be accurately controlled, making them ideal for applications such as switching in power supplies, digital circuits and audio amplifiers.A power MOSFET is an insulated gate field-effect transistor with a power rating obtained from the voltage between the gate and drain terminals, along with the characteristics of its insulation gate-oxide layer. It is the most suitable type of transistor for switching power supplies and has the advantage of having a low on state resistance, making it highly efficient in power-circuit designs.In the IXFT69N30P application field, the device is mainly used in electronic products such as switching power supplies, audio amplifiers and other related power-circuit designs. With its low on-state resistance, high power handling capability and wide operating temperature range, it can stand up to the demanding power requirements of these applications.The IXFT69N30P working principle is based on the physics of insulated gate field effect transistor technology. A power MOSFET works by using the gate electric field to modulate the current between the source and drain terminals, allowing for precise control and switching of power. The low on-state resistance and high power capability of the IXFT69N30P make it an ideal choice for use in the electronics industry.In conclusion, the IXFT69N30P is a reliable and cost-effective power MOSFET that is ideal for use in electronics applications, including switching power supplies and audio amplifiers. This device has the advantage of having a low on-state resistance and high power handling capability, as well as a wide operating temperature range, making it an excellent choice for power-circuit designs. The working principle of the IXFT69N30P is based on the physics of insulated gate field effect transistor technology, allowing for precise control and switching of power.

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