Allicdata Part #: | IXFT80N15Q-ND |
Manufacturer Part#: |
IXFT80N15Q |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 150V 80A TO-268 |
More Detail: | N-Channel 150V 80A (Tc) 360W (Tc) Surface Mount TO... |
DataSheet: | IXFT80N15Q Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 4mA |
Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
Supplier Device Package: | TO-268 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 360W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4500pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 180nC @ 10V |
Series: | HiPerFET™ |
Rds On (Max) @ Id, Vgs: | 22.5 mOhm @ 40A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 80A (Tc) |
Drain to Source Voltage (Vdss): | 150V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IXFT80N15Q is a highly efficient metal oxide semiconductor field-effect transistor (MOSFET) designed to operate with a power load, making it perfectly suited for use in high power applications. It possesses features such as low On-resistance, good efficiency, and low gate charge that make it well-suited for a wide range of applications. This article will discuss the application field and working principle of the IXFT80N15Q.The IXFT80N15Q is an N-channel Enhancement-type MOSFET which is used for a wide variety of applications, such as DC and AC motor control, lighting control, and power switches. It features low On-resistance, making it suitable for motor control and other general power applications. Additionally, its low gate charge provides a high switching speed, making it suitable for high-speed switching and switching circuits.The working principle of the IXFT80N15Q is based on the transfer of charge carriers between body and source regions. This process is called MOSFET conduction. In MOSFET conduction, the body and source region are connected to the drain via an insulated gate. When a voltage is applied between the gate and the source, the electric field between the gate and the source region will create a diffusion of charge carriers from the body to the source. This increases the current flow from the drain to the source and decreases the voltage level applied across the drain and source. The increased current flow allows the IXFT80N15Q to control a target power load efficiently and accurately.
The IXFT80N15Q is also highly efficient due to its low RDS (ON), part of its low On-resistance, which makes it suitable for applications that require high efficiency. Additionally, it has a low gate charge, which results in a high switching speed. This makes it ideal for high-speed switching, such as in logic circuits.To sum up, the IXFT80N15Q is a highly efficient N-channel Enhancement-type MOSFET which is well-suited for a variety of applications. It is characterized by its low RDS (ON), low On-resistance, and low gate charge, allowing for efficient and accurate power load control and high speed switching. Its high efficiency and good switching characteristics make it a great choice for motor control, lighting control, power switches, and other applications that require high efficiency and high speed switching.
The specific data is subject to PDF, and the above content is for reference
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