
Allicdata Part #: | IXFT28N50Q-ND |
Manufacturer Part#: |
IXFT28N50Q |
Price: | $ 9.15 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 500V 28A TO-268(D3) |
More Detail: | N-Channel 500V 28A (Tc) 375W (Tc) Surface Mount TO... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 8.31600 |
Vgs(th) (Max) @ Id: | 4.5V @ 4mA |
Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
Supplier Device Package: | TO-268 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 375W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3000pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 94nC @ 10V |
Series: | HiPerFET™ |
Rds On (Max) @ Id, Vgs: | 200 mOhm @ 14A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 28A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXFT28N50Q is a Reverse Conducting Field Effect Transistor (Reverse Conducting FET) developed by Infineon Technologies. This device is a sometimes referred to as a “dummy” MOSFET, as it functions as a diode in addition to performing other tasks. It has a typical on-state resistance of 0.2 Ohms, has an operating voltage of 28V, and a maximum drain current at 150A. This is an ideal device for low-power and cost-sensitive applications.
The application fields of the IXFT28N50Q are widespread, ranging from multi-phase voltage regulator design to solar panel control. It is also suitable for automotive applications, including for safety devices, power converters, robotics, and even temperature control. Other fields include advanced telecommunication systems, LCD displays, and microwave radio equipment.
The working principle of the IXFT28N50Q is based on MOSFET technology, as it features a symmetrical vertical N+1/N region structure and a P+ guard ring structure. The N+1/N region structure enables efficient current flow and prevents parasitic P-N junction breakdown, while the P+ guard ring structure reduces gate-source capacitance. Thus, this MOSFET device ensures maximum reliability and low power loss.
The IXFT28N50Q’s special feature is its robust reverse-blocking capability. It utilizes a specially designed internal p-type shield to achieve reverse drain-to-source blocking. This is accomplished by forward-biasing the p-type shield, a diode equivalent structure comprising the drain, source, guard rings and gate. This p-type shield enables efficient blocking of current flow in the reverse direction, which provides exceptional protection against over-current or short-circuit events.
The IXFT28N50Q provides a simple and efficient means of switching current in low-power applications, and its reverse-blocking capability makes it ideal for use in high-power systems. Its features of low on-state resistance and high withstand voltage make it a popular choice in many different application fields. It is important to keep in mind that the IXFT28N50Q is only capable of supplying 150A at 28V, so it is not suitable for higher voltage and amperage applications.
The specific data is subject to PDF, and the above content is for reference
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