
Allicdata Part #: | IXFT30N60P-ND |
Manufacturer Part#: |
IXFT30N60P |
Price: | $ 5.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 600V 30A TO-268 D3 |
More Detail: | N-Channel 600V 30A (Tc) 500W (Tc) Surface Mount TO... |
DataSheet: | ![]() |
Quantity: | 1000 |
30 +: | $ 4.57443 |
Vgs(th) (Max) @ Id: | 5V @ 4mA |
Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
Supplier Device Package: | TO-268 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 500W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4000pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 82nC @ 10V |
Series: | HiPerFET™, PolarHT™ |
Rds On (Max) @ Id, Vgs: | 240 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 30A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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)The IXFT30N60P is an insulated-gate field-effect transistor (IGFET) that uses the MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) power transistor technology. This type of transistor is a third-generation semiconductor device that utilizes the properties of metal-oxide semiconductor capacitors. It is a type of voltage-controlled transistor (VCT) because the current flow through it is controlled by a voltage applied to its gate terminal, resulting in the ability to operate in either enhancement or depletion mode.
The IXFT30N60P has a number of useful applications and can be found in a wide range of electronics devices. These devices include power supplies, dc-to-dc converters, motor drives, automotive electronics and power management systems. Some other applications include power amplifiers, analog switches and pulse-width modulation (PWM) circuits.
In terms of its working principle, the IXFT30N60P uses the gate voltage to control the drain current flow. In enhancement mode, when the voltage applied to the gate is above the threshold voltage, the device creates a conducting channel between the source and drain. This applies a higher drain voltage, which results in a greater drain current flow. The device also has other key characteristics, such as its threshold voltage, channel leakage current, and maximum drain current.
The IXFT30N60P is a versatile transistor with a number of applications. Due to its unique characteristics and wide range of applications, the IXFT30N60P can be used in a wide range of applications, such as power electronics, automotive electronics, motor drives and more. Its use in motor drives is particularly useful, as it can be used to control the current flow through the motor in order to achieve the desired speed and torque.
The IXFT30N60P is a reliable and efficient transistor with a range of useful applications. It is a high-performance transistor which is capable of providing high levels of performance, while consuming minimal amounts of power. It is also a relatively inexpensive transistor, making it attractive to designers of electronic circuits.
Overall, the IXFT30N60P is a versatile and reliable high-performance transistor with a wide range of applications. It is a valuable tool for the electronics designer, as its excellent features make it suitable for many different applications. Its characteristics, such as its low power consumption and efficient operation, make it ideal for a range of uses in the field of electronics.
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