IXFT52N30Q TRL Allicdata Electronics
Allicdata Part #:

IXFT52N30QTRL-ND

Manufacturer Part#:

IXFT52N30Q TRL

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 300V 52A TO268
More Detail: N-Channel 300V 52A (Tc) 360W (Tc) Surface Mount TO...
DataSheet: IXFT52N30Q TRL datasheetIXFT52N30Q TRL Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 4mA
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device Package: TO-268 (IXFT)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 360W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5300pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Series: HiPerFET™
Rds On (Max) @ Id, Vgs: 60 mOhm @ 26A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Drain to Source Voltage (Vdss): 300V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The IXFT52N30Q TRL is a transistor with the specific purpose of applications in the enhancement mode power field-effect transistor. The TRL is an n-channel MOSFET that is suitable for a wide range of applications like AC/DC converters, switches, motor control, etc. It can also be used as a replacement for many TO-220 and SOT-227 packages as it features an improved thermal resistance, faster switching, and lower gate charge. This particular transistor is proven to be able to significantly decrease the total thermal resistance path, and significantly improve the device’s performance in power applications.

The IXFT52N30Q TRL utilizes the field effect process. This is a process that allows for a controllable electric field to be created between two opposite-polarity electrodes when electric current is passed through. This process enables the transistor to operate in its purest form, with fewer malfunctions.

In terms of its electrical properties, the IXFT52N30Q TRL has an operating voltage range of -55V to 175V, with a drain current of 5A. The maximum power dissipation is 55W, and the maximum drain-source voltage is 70V. It also has a maximum gate threshold voltage of 5V, with a gate charge of 39nC.

The IXFT52N30Q TRL has several advantageous features. First, its thermal resistance path is extremely low as compared to other transistors. This allows for greater performance in terms of power applications. In addition to this, the transistor also has a fast switching time, enabling it to switch on and off rapidly. This feature is especially useful when using the transistor for AC/DC converters, in which a quick and efficient switching process is necessary.

In terms of its practical use, the IXFT52N30Q TRL offers an upgrade over other models. It is especially useful in power circuits since it provides a much lower thermal resistance path. In addition, its fast switching time affords it a number of other advantages over its competitors. This makes it an ideal option for applications such as motor control, AC/DC converters, switches, and more.

In conclusion, the IXFT52N30Q TRL is an enhancement mode power field-effect transistor that gives off an exceptional performance in terms of thermal resistance, switching speed, and gate charge. It is suitable for a myriad of applications and can be easily used as a replacement for many other TO-220 and SOT-227 packages. Its numerous advantageous features make it an ideal option for power applications, AC/DC converters, switches, and many more.

The specific data is subject to PDF, and the above content is for reference

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