IXFT50N60X Allicdata Electronics
Allicdata Part #:

IXFT50N60X-ND

Manufacturer Part#:

IXFT50N60X

Price: $ 6.60
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 600V 50A TO268
More Detail: N-Channel 600V 50A (Tc) 660W (Tc) Surface Mount TO...
DataSheet: IXFT50N60X datasheetIXFT50N60X Datasheet/PDF
Quantity: 1000
60 +: $ 5.94090
Stock 1000Can Ship Immediately
$ 6.6
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device Package: TO-268
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 660W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4660pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 116nC @ 10V
Series: HiPerFET™
Rds On (Max) @ Id, Vgs: 73 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXFT50N60X is a fast switching N-channel MOSFET transistor manufactured by IXYS Integrated Circuits. It is mainly used in high-efficiency power converter designs. This particular component is also known as an IGBT because it combines the features of two different types of components.

The IXFT50N60X is an insulated-gate bipolar transistor, also known as an IGCT. This type of component has two distinct functional parts. The first is the insulated-gate field-effect transistor (IGFET), which is a type of transistor that is very efficient in controlling the current that flows through the channel between the source and drain. It has a high input resistance, allowing it to be used in applications with high frequency switching applications.

The second part of the IXFT50N60X is the bipolar transistor, which is a type of transistor used for controlling higher currents (when compared to the IGFET). This particular component is a depletion-type IGCT, meaning that it has an depletion mode operation. This mode allows for improved power efficiency and reduced power loss, making it suitable for applications running at high currents and voltages.

When using the IXFT50N60X, the gate voltage controls the voltage drop between the source and the drain. By adjusting the gate voltage, the current flow can be adjusted to achieve the desired performance or output. Lower gate voltage will result in a higher current flow, while higher gate voltage will create a lower current flow.

A typical application of the IXFT50N60X is in AC/DC and DC/DC converters. These applications require high-speed switching and good power efficiency, which makes the IXFT50N60X an ideal choice. The component allows for efficient power conversion while still having minimal power losses, which results in a long-term stable and reliable operation.

The IXFT50N60X is also used in motor control applications for controlling the direction of current flow in an electric motor. In this application, the component’s ability to control higher currents makes it the ideal choice for robust motor control. The component also ensures minimal losses and improved power efficiency, resulting in reliable operation.

The IXFT50N60X is an essential component in a wide range of applications, especially in applications that require high efficiency, faster switching times, and motor control. It is also a highly reliable component which ensures minimal losses and improved power efficiency, making it an ideal choice for a variety of applications. Its combination of insulated-gate bipolar transistor and field-effect transistor (IGFET) technology gives it a unique combination of features that make it suitable for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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