IXFT140N20X3HV

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N-channel enhancement mode vertical D-MOS transistors are used for a variety of applications requiring high switching speeds, low power consumption, and excellent performance at high temperature. The IXFT140N20X3HV is an N-channel enhancement-mode vertical D-MOS transistor in an SOT23 package, specifically designed for use in power switching applications. This device is a high voltage transistor with an excellent on-state resistance and high current carrying capacity. It has a drain-to-source breakdown voltage rating of 76V, continuous drain current rating of 140mA, and an on-state resistance as low as 20Ω. The IXFT140N20X3HV is also designed to operate over a wide temperature range of -55°C to 150°C.

The IXFT140N20X3HV is suitable for any application requiring high-voltage, high-carrying capacity, and low-loss power switching. It is specifically designed for applications such as high-speed motor control, AC/DC motor speed control, high-power audio amplifiers, and switching power supplies. It provides excellent switching performance with low losses and fast recovery times, which makes it ideal for power switching applications. The IXFT140N20X3HV device also has a low input capacitance, making it well suited for high-speed switching circuits.

The IXFT140N20X3HV is a vertical D-MOS transistor, so the source, gate, and drain are all on the vertical plane of the SOT23 package. The source is connected to the circuit ground, the gate is connected to the gate voltage, and the drain is connected to the high voltage. The body diode between the drain and the source will be forward biased when the voltage at the gate is below the voltage at the drain. The current flows from the drain to the source when the gate voltage is above the drain voltage. When the gate voltage is reduced, the gate loses its ability to control the drain current and the transistor is off. Thus, the functioning of the IXFT140N20X3HV relies on the ability of the gate voltage to control the drain current.

The IXFT140N20X3HV features a high figure of merit (FOM) and is capable of providing excellent switching performance. The device has an FOM of 0.25A/V2, which translates to a low gate capacitance that allows for fast switching times. This makes it suitable for applications with high-frequency switching, such as PWM controllers. The device also has a high on-state resistance, so it can handle high current draw with very low losses. This makes it well suited for applications where high power efficiency is desired.

The IXFT140N20X3HV is a high voltage vertical D-MOS transistor that is ideal for powering switching applications requiring low losses, fast recovery times, and excellent high-temperature performance. It features a low input capacitance, high on-state resistance, and high figure of merit, making it well-suited for high-frequency switching applications such as PWM controllers. It is also designed to operate over a wide temperature range of -55°C to 150°C. With its high performance, low power consumption, and low on-state resistance, the IXFT140N20X3HV is an excellent choice for a wide range of power switching applications.

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