IXFT120N15P

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IXFT120N15P is a type of field-effect transistor (FET), more specifically an insulated-gate FET (IGFET) or metal-oxide-semiconductor field-effect transistor (MOSFET). It is a single size device with a 3-terminal configuration more exact, 3-pin dual-gate with built-in drain source – is suitable for various applications.

The IXFT120N15P offers both excellent power efficiency and superior power performance for applications requiring drain current ratings of up to 15A. Its configurations 3-pin dual-gate with built-in drain source, provides high power density and flexibility, permitting a wide range of gate control linkage configurations including parallel, zigzag, and series/sourcing, as well as having the ability to use a multitude of combinations of operating configurations allowing user’s to get the highest efficiency at their operating point of choice.

Moreover, the MOSFET structures plus trench cell technology of this product enables it to provide low on-state resistance, high breakdown voltage and low gate charge. All these features result in a highly efficient device by reducing switching loss and power dissipation at the same time. Additionally, it has very fast switching speeds, low overlap and forward losses and comes in a small, low profile, high power package.

The IXFT120N15P application fields include, but are not limited to, AC/DCPower supplies, Industrial control, Motor Controls, Current Sensing and Automotive applications.

The working principle of the IXFT120N15P is based on current control. It is a voltage controlled device that employs a number of transistors to enable the current flow from the drain to the source. The ability of the device to control the current is related to the gate-source voltage where the MOSFET is either “on” or “off”. If the voltage is low enough (0V or ground), the s-channel MOSFET is “on” and the current will flow. If the voltage increases the current will decrease, up until the point where the voltage switches to “off” and the current in the device will be zero.

In comparison to its competitors, the IXFT120N15P technology makes use of dedicated cells, which include trenches and diamond-shaped architecture, its performance is far superior in terms of power performance, efficiency, and power density. The IXFT120N15P provides an excellent solution for applications requiring high power rating and wide variety of configurations.

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