Allicdata Part #: | IXFT150N25X3HV-ND |
Manufacturer Part#: |
IXFT150N25X3HV |
Price: | $ 8.30 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | 250V/150A ULTRA JUNCTION X3-CLAS |
More Detail: | N-Channel 250V 150A (Tc) 780W (Tc) Surface Mount T... |
DataSheet: | IXFT150N25X3HV Datasheet/PDF |
Quantity: | 1000 |
30 +: | $ 7.54593 |
Vgs(th) (Max) @ Id: | 4.5V @ 4mA |
Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
Supplier Device Package: | TO-268HV |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 780W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 10400pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 154nC @ 10V |
Series: | HiPerFET™ |
Rds On (Max) @ Id, Vgs: | 9 mOhm @ 75A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 150A (Tc) |
Drain to Source Voltage (Vdss): | 250V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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FETs (Field Effect Transistors) are a family of devices that are used in a wide variety of different applications, such as amplifying signals, switching on and off and providing controlled current flow. The IXFT150N25X3HV is a type of power Field Effect Transistor that is used to transfer electrical signals. This article will outline the application field and working principle of the IXFT150N25X3HV transistor.
The IXFT150N25X3HV is a type of N-type MOSFET (Metal Oxide Semiconductor Field Effect Transistor). This type of transistor is widely used in a range of power control applications that require high current and power switching. The IXFT150N25X3HV has a continuous drain current rating of 55 A, a drain source voltage rating of 100 V, a power dissipation of 172 W and a maximum working temperature of 175 degrees Celsius.
IXFT150N25X3HV transistors can be used in a variety of different applications. They are commonly used in power control, such as DC-DC converters, as well as solar panel control, DC motor control, LED lighting and HVAC systems. The IXFT150N25X3HV transistors can provide fast switching and can be used in many applications that require a high switching frequency.
The working principle of the IXFT150N25X3HV transistor is based on the same principles as all Field Effect Transistors. The transistor is composed of three main elements – the gate, the drain and the source. The gate acts as a control element, with the drain and source connected to the device. When a voltage is applied to the gate, it causes a change in the width of the channel between the drain and the source, which affects the current flow between the two terminals of the transistor. This is known as the transistor’s threshold voltage.
The IXFT150N25X3HV also has an additional power derating feature, which helps to protect the transistor from thermal damage due to excessive current and power. This feature is activated at a certain temperature, and will reduce the maximum current and power ratings of the transistor based on the temperature.
The IXFT150N25X3HV transistor is a powerful and efficient component that can be used in a range of applications demanding large amounts of current and power. It is reliable, easy to use and can provide fast switching speeds. It is also equipped with a power derating feature that helps to protect it from excessive heat and current. With these features, the IXFT150N25X3HV is ideal for applications such as DC motor control, LED lighting, HVAC systems and solar panel control.
The specific data is subject to PDF, and the above content is for reference
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