IXFT20N60Q

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IXFT20N60Q is a power MOSFET which belongs to a family of innovative ultra-low gate charge (Qg) devices. This device is developed by Infineon Technologies, a German semiconductor manufacturer, to provide a better power handling capacity and efficiency for applications in power electronics, such as AC/DC converters, switching power supplies, power inverters and motor drivers.

MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) are a popular type of transistor used in high efficiency and high speed switching circuits. It is made of metal oxide and metal gate on a silicon substrate. It operates based on the principles of metal-oxide-semiconductor (MOS) capacitance which enables it to operate at high frequencies, control high currents and offer high efficiency. Typically, the ‘gate’ of the MOSFET is used as a switch to control the electrical current. When the gate is charged with electrical energy, it acts as a conductor which allows electricity to flow from the drain to the source. Conversely, when the gate is discharged, it becomes an insulator and prevents electricity from flowing.

IXFT20N60Q is a N-channel depletion-mode MOSFET. This device works on the principle of ‘enhancement’ on-state which refers to the process wherein a voltage is applied to the gate of the MOSFET to ‘enhance’ the current flow through the MOSFET’s drain and source. When the gate voltage is less than the threshold voltage, labelled as ‘Vth’, the MOSFET acts as an insulator. On the other hand, when the gate voltage exceeds the Vth, the MOSFET will be turned ‘on’ and permit a current to flow from drain to source. This is known as the enhancement mode operation.

IXFT20N60Q has an ultra-low gate charge of 8.3 nano-Coulombs (Qg) which allows for higher switching speeds due to its low input capacitance. It is a high speed, low voltage device featuring 175A continuous drain current (Id), with a low on-state resistance of 20.25mΩ. It can operate at a maximum junction temperature of 175 degrees Celsius, allowing for improved power dissipation in high temperature applications. Because of its low gate charge, high current capabilities and high temperature operation, it is suitable for use in a variety of applications in power electronics. These include AC/DC converters, switching power supplies, power inverters, motor control circuits and motor drivers.

IXFT20N60Q integrates a modified SOP-5 lead frame to ensure a better thermal resistance, a small package size, and an impressive power handling capacity, despite its small size. This allows for implementation in high power density and high efficiency systems, such as, AC/DC converters, power inverters, LED driver modules and motor drivers, that require high currents and reliable performance in demanding environments.

In conclusion, IXFT20N60Q is a N-channel depletion-mode MOSFET developed by Infineon Technologies. It works on the principle of ‘enhancement’ on-state and it has an ultra-low gate charge of 8.3 nano-Coulombs (Qg). This device is suitable for high power density and high efficiency applications that require high currents, such as AC/DC converters, switching power supplies, power inverters, motor control circuits and motor drives. Its modified SOP-5 lead frame ensures a better thermal resistance, and a small package size, allowing for implementation in space-limited systems.

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