Allicdata Part #: | IXFT60N25Q-ND |
Manufacturer Part#: |
IXFT60N25Q |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 250V 60A TO-268 |
More Detail: | N-Channel 250V 60A (Tc) 360W (Tc) Surface Mount TO... |
DataSheet: | IXFT60N25Q Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 4mA |
Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
Supplier Device Package: | TO-268 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 360W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5100pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 180nC @ 10V |
Series: | HiPerFET™ |
Rds On (Max) @ Id, Vgs: | 47 mOhm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 60A (Tc) |
Drain to Source Voltage (Vdss): | 250V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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IXFT60N25Q application field and working principle
IXFT60N25Q is a low-voltage N-channel MOSFET. It is a three-terminal semiconductor device and is a special type of Mosfet, which stands for Metal Oxide Field Effect Transistor, that combines the characteristics of a metal oxide insulation layer and semiconductor processing to create an insulated, electrically-controlled switch. This device differs from the ordinary field-effect transistor (FET) because of its insulation layer, which provides greater durability and low power consumption.
Application field of IXFT60N25Q
The IXFT60N25Q is widely used in many applications, and is most commonly used in low-voltage DC applications, such as in motor control circuits. It is also used as a switch in circuits, as well as in power converters and power management circuits. Its lowvoltage and high current capability make it ideal for applications requiring maximum power adjustment and switching. Additionally, IXFT60N25Q can be used in low-voltage audio amplifier circuits, digital to analog converters, and charge pumps.
Working Principle of IXFT60N25Q
The working principle of the IXFT60N25Q is relatively simple. The device consists of three terminals, the source, the gate, and the drain. The N-channel MOSFET has a positive voltage applied to the gate and the source is connected to ground. Because the gate is positive, it forms an electric field that attracts holes from the source. The electric field also repels electrons from the drain to the source. This action creates an impedance between the drain and the source, allowing only a specific amount of current to flow through the device in a certain direction.
The current flow through an N-channel MOSFET is proportional to the input voltage, meaning that the output current is directly related to the voltage applied to the gate terminal. Additionally, the drain-source voltage is independent of the gate voltage, meaning that the device can be used to control and manipulate the current in a circuit without affecting the voltage.
IXFT60N25Q is also a low-voltage device, which means that it can operate with a low gate voltage, allowing the device to continue to function at lower power supplies. This makes it ideal for applications in consumer electronics and other portable devices, where low power consumption is important.
Conclusion
IXFT60N25Q is a low-voltage N-channel MOSFET that is used in many applications such as motor control circuits, audio amplifier circuits, and digital to analog converters. The device works by applying a positive voltage to the gate terminal and allowing only a specific amount of current to flow through the device. It is a low-voltage device, making it ideal for applications in consumer electronics and other portable devices, where low power consumption is important.
The specific data is subject to PDF, and the above content is for reference
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IXFT60N25Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH 250V 60A TO-2... |
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