
Allicdata Part #: | IXFT7N90Q-ND |
Manufacturer Part#: |
IXFT7N90Q |
Price: | $ 14.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 900V 7A TO-268 |
More Detail: | N-Channel 900V 7A (Tc) 180W (Tc) Surface Mount TO-... |
DataSheet: | ![]() |
Quantity: | 1000 |
30 +: | $ 12.72290 |
Vgs(th) (Max) @ Id: | 5V @ 2.5mA |
Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
Supplier Device Package: | TO-268 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 180W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2200pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 56nC @ 10V |
Series: | HiPerFET™ |
Rds On (Max) @ Id, Vgs: | 1.5 Ohm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 7A (Tc) |
Drain to Source Voltage (Vdss): | 900V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXFT7N90Q is a new, state-of-the-art metal-oxide-semiconductor field-effect transistor, or MOSFET, from Infineon Technologies. As a MOSFET, it belongs to the family of single transistors, offering a combination of switching speed, high performance, and excellent power handling abilities. In this article, we’ll explore the IXFT7N90Q’s key application field and discuss its working principle.
Application Field
The IXFT7N90Q is part of Infineon’s OptiMOS™3 product family, which specializes in power applications with high demands on efficiency and thermal performance. More specifically, the IXFT7N90Q’s main application field is in switch-mode power supplies. Its high-frequency performance and low RDSon (drain-source on-state resistance) make it ideal for high-performance power conversion, with the capacity for both high-current and high-voltage operations. It can also be used for DC-DC converters, Class-D amplifiers, battery charging and uninterruptible power supplies (UPS). It also performs well in LCD backlighting, motor controls, and power transistors such as high-side and low-side switches.
Working Principle of the IXFT7N90Q
The working principle behind the IXFT7N90Q is that of a traditional MOSFET, in which an insulated gate is electrically charged to affect conductivity between the source and drain leads. By applying an appropriate voltage to this gate, the current flow through the MOSFET can be controlled. The IGBT is a type of insulated gate that specializes in higher voltage and current capabilities. The IXFT7N90Q offers an additional benefit in that it can be easily paralleled without significant increases in on-state resistance.
The IXFT7N90Q is rated for operation up to 700V, making it suitable for applications involving high-voltage AC systems. It also offers good avalanche characteristics, allowing for stable switching in high-power applications. Additionally, it is rated for a thermal runaway temperature of 175°C, which limits potential damage to the device in the event of an over-temperature condition.
Conclusion
The IXFT7N90Q is part of Infineon’s OptiMOS™ 3 product family, and is particularly suitable for switch-mode power supplies. It offers high-frequency performance and low RDSon, allowing for high-current and high-voltage operations. Additionally, its avalanche characteristics and rated temperature make it stable and safe to use. All things considered, the IXFT7N90Q is an excellent choice for high-power applications requiring efficient, precise, and reliable power conversion.
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