IXFT44N50P Allicdata Electronics
Allicdata Part #:

IXFT44N50P-ND

Manufacturer Part#:

IXFT44N50P

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 500V 44A TO-268 D3
More Detail: N-Channel 500V 44A (Tc) 658W (Tc) Surface Mount TO...
DataSheet: IXFT44N50P datasheetIXFT44N50P Datasheet/PDF
Quantity: 88
Stock 88Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 5V @ 4mA
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device Package: TO-268
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 658W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5440pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V
Series: HiPerFET™, PolarHT™
Rds On (Max) @ Id, Vgs: 140 mOhm @ 22A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IXFT44N50P is a technology from IXYS Power, a secondary power conversion and control solutions provider specializing in high voltage, high current and high power. IXFT44N50P is one of the power switching devices from their top selling Discrete Power MOSFETs series. This device is widely used in many applications, but most notably in switched-mode power supplies and other DC-DC conversion applications.

To understand IXFT44N50P’s application field, you first need to understand it’s working principle. It’s a junction field-effect transistor, which has a higher efficiency than bipolar transistors and can handle higher power levels with greater efficiency. The device has a metal oxide semiconductor layer between its gate and source, and its control operation is based on the gate potential. When the potential of the gate is increased, the width of the depletion region between the gate and the source increases, allowing electrons to be mobilized and forming a channel between the source and the drain region. When the voltage of the gate is lowered, the depletion region shrinks and the current flow is stopped.

IXFT44N50P’s main application field is in DC-DC conversion, especially for high-voltage and high-power supply applications. The device’s ability to withstand higher voltages, strong gate drive and low gate charge makes it ideal for such applications. It’s also often used in motor control, lighting dimming and solar power systems. IXFT44N50P is also often chosen as an integrated device with max current ratings up to 44A and an impressive power efficiency rating of 99%.

IXFT44N50P is an excellent power switching device, and its application field is extremely versatile. It can be used for a variety of applications such as motor control, lighting dimming, solar power systems and most importantly, DC-DC conversion. The device’s high voltage handling capability, strong gate drive and low gate charge make it extremely suitable for these applications. It also offers power efficiency of up to 99%, making it an extremely cost-effective solution. IXYS Power provides a full range of Discrete Power MOSFETs, and IXFT44N50P is one of their most popular products.

The specific data is subject to PDF, and the above content is for reference

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