IXFT60N65X2HV Allicdata Electronics
Allicdata Part #:

IXFT60N65X2HV-ND

Manufacturer Part#:

IXFT60N65X2HV

Price: $ 6.43
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH
More Detail: N-Channel 650V 60A (Tc) 780W (Tc) Surface Mount TO...
DataSheet: IXFT60N65X2HV datasheetIXFT60N65X2HV Datasheet/PDF
Quantity: 995
30 +: $ 5.79243
Stock 995Can Ship Immediately
$ 6.43
Specifications
Vgs(th) (Max) @ Id: 5V @ 4mA
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device Package: TO-268HV
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 780W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 6300pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 108nC @ 10V
Series: HiPerFET™
Rds On (Max) @ Id, Vgs: 52 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXFT60N65X2HV is a Field-Effect Transistor (FET) used for a variety of applications, particularly for high voltage and power electronics applications. It is a 650V, 60A N-Channel MOSFET (Metal-Oxide-Semiconductor FET) with an "HV" designation, meaning it is designed to withstand a higher voltage than regular MOSFETs. The IXFT60N65X2HV is an ideal choice for applications in which high current and high voltage isolation is desired.

The IXFT60N65X2HV works on the basis of a MOSFET structure, a type of transistor. Transistors are devices which contain semiconductor materials, either P-type (positive) or N-type (negative), and use a gate voltage to control a flow of electrons. MOSFETs are unique in that they use an insulated gate electrode to control the flow of electrons. In the IXFT60N65X2HV, the insulated gate is the N-type semiconductor surrounded by an oxide insulation layer, which acts as the gate voltage.

One of the primary advantages of using the IXFT60N65X2HV is its high voltage and current withstand capabilities. It can handle up to 650V and 60A without compromising its performance. This makes it ideal for applications which require high voltage isolation, such as power converters, switching equipment, and UPS systems. Additionally, the IXFT60N65X2HV is designed with a low input capacitance and fast switching speed, which allows it to respond quickly to changing circuit conditions and maintains low losses even at high frequencies.

The IXFT60N65X2HV is also a low-power device. It has a low leakage current, which reduces heat dissipation and power loss, and has a low On-Resistance, which increases the efficiency of the device. Finally, the IXFT60N65X2HV is also built with a high-reliability package, ensuring that it will work reliably even in harsh environmental conditions.

Overall, the IXFT60N65X2HV is a reliable, high-performance, high-voltage FET that is well-suited for a variety of applications. Its combination of high voltage and current withstand capabilities, low input capacitance, fast switching speed, and low power dissipation make it an ideal choice for those looking for a reliable, high-performing FET.

The specific data is subject to PDF, and the above content is for reference

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