IXFT30N50Q3 Allicdata Electronics
Allicdata Part #:

IXFT30N50Q3-ND

Manufacturer Part#:

IXFT30N50Q3

Price: $ 9.30
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 500V 30A TO-268
More Detail: N-Channel 500V 30A (Tc) 690W (Tc) Surface Mount TO...
DataSheet: IXFT30N50Q3 datasheetIXFT30N50Q3 Datasheet/PDF
Quantity: 35
1 +: $ 8.46090
30 +: $ 6.93611
120 +: $ 6.25932
510 +: $ 5.24429
Stock 35Can Ship Immediately
$ 9.3
Specifications
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device Package: TO-268
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 690W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
Series: HiPerFET™
Rds On (Max) @ Id, Vgs: 200 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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IXFT30N50Q3 Application Field and Working Principle

IXFT30N50Q3 is a type of Insulated-Gate Bipolar Transistor (IGBT) that provides excellent performance and a wide range of applications.

An IGBT is a three-terminal semiconductor device that uses the bipolar junction transistor (BJT) and the metal-oxide-silicon field-effect transistor (MOSFET), as part of its design. The IGBT has an insulated gate terminal, much like a MOSFET, which means that the device can be switched on or off using an appropriate voltage applied to the gate.

The main application area of IXFT30N50Q3 is in power conversion, which is used in applications such as variable speed drives, motor control, welding, and UPS systems. This is because the IGBT has a low on-state drop, low turn-off time, good switching behavior, and low conduction losses. The IGBT has the ability to efficiently transfer power from the input to the output in a very short period of time, which make them ideal for high-power applications.

The working principle of IXFT30N50Q3 is much like that of other IGBTs. The IGBT is a four-layer device that works in three stages, namely cut-off, linear and saturation. In the cut-off mode, the device is off and has no current flowing through it. In the linear mode, the device is on, but is not saturated, which means the voltage-current relationship is linear. In the saturation mode, the current through the device is determined by the gate voltage.

In order to turn the IXFT30N50Q3 on, a positive voltage is applied to the gate terminal, which causes a positive charge to be stored on the gate dielectric. This charge attracts carriers from the npn BJT base and n-channel MOSFET source, allowing current to flow across the device. To turn off the device, a negative voltage is applied to the gate terminal, which causes the stored charge to dissipate, preventing the carriers from flowing.

The IXFT30N50Q3 is a very versatile component, due to its low on-state drop, low turn-off time, good switching behavior and low conduction losses. It is gaining popularity as an efficient and reliable power conversion component and is widely used in various high-power applications.

The specific data is subject to PDF, and the above content is for reference

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