Allicdata Part #: | IXFT30N50Q3-ND |
Manufacturer Part#: |
IXFT30N50Q3 |
Price: | $ 9.30 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 500V 30A TO-268 |
More Detail: | N-Channel 500V 30A (Tc) 690W (Tc) Surface Mount TO... |
DataSheet: | IXFT30N50Q3 Datasheet/PDF |
Quantity: | 35 |
1 +: | $ 8.46090 |
30 +: | $ 6.93611 |
120 +: | $ 6.25932 |
510 +: | $ 5.24429 |
Vgs(th) (Max) @ Id: | 6.5V @ 4mA |
Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
Supplier Device Package: | TO-268 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 690W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3200pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 62nC @ 10V |
Series: | HiPerFET™ |
Rds On (Max) @ Id, Vgs: | 200 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 30A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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IXFT30N50Q3 Application Field and Working Principle
IXFT30N50Q3 is a type of Insulated-Gate Bipolar Transistor (IGBT) that provides excellent performance and a wide range of applications.
An IGBT is a three-terminal semiconductor device that uses the bipolar junction transistor (BJT) and the metal-oxide-silicon field-effect transistor (MOSFET), as part of its design. The IGBT has an insulated gate terminal, much like a MOSFET, which means that the device can be switched on or off using an appropriate voltage applied to the gate.
The main application area of IXFT30N50Q3 is in power conversion, which is used in applications such as variable speed drives, motor control, welding, and UPS systems. This is because the IGBT has a low on-state drop, low turn-off time, good switching behavior, and low conduction losses. The IGBT has the ability to efficiently transfer power from the input to the output in a very short period of time, which make them ideal for high-power applications.
The working principle of IXFT30N50Q3 is much like that of other IGBTs. The IGBT is a four-layer device that works in three stages, namely cut-off, linear and saturation. In the cut-off mode, the device is off and has no current flowing through it. In the linear mode, the device is on, but is not saturated, which means the voltage-current relationship is linear. In the saturation mode, the current through the device is determined by the gate voltage.
In order to turn the IXFT30N50Q3 on, a positive voltage is applied to the gate terminal, which causes a positive charge to be stored on the gate dielectric. This charge attracts carriers from the npn BJT base and n-channel MOSFET source, allowing current to flow across the device. To turn off the device, a negative voltage is applied to the gate terminal, which causes the stored charge to dissipate, preventing the carriers from flowing.
The IXFT30N50Q3 is a very versatile component, due to its low on-state drop, low turn-off time, good switching behavior and low conduction losses. It is gaining popularity as an efficient and reliable power conversion component and is widely used in various high-power applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
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IXFT58N20Q | IXYS | -- | 1000 | MOSFET N-CH 200V 58A TO-2... |
IXFT32N50Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH 500V 32A TO-2... |
IXFT40N30Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH 300V 40A TO-2... |
IXFT52N30Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH 300V 52A TO-2... |
IXFT13N100 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 1KV 12.5A TO-... |
IXFT14N100 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 1000V 14A TO-... |
IXFT30N50Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH 500V 30A TO-2... |
IXFT32N50 | IXYS | -- | 1000 | MOSFET N-CH 500V 32A TO-2... |
IXFT74N20 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 200V 74A TO-2... |
IXFT80N10Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH 100V 80A TO-2... |
IXFT80N15Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH 150V 80A TO-2... |
IXFT80N20Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH 200V 80A TO-2... |
IXFT12N100Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH 1000V 12A TO2... |
IXFT15N100Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH 1000V 15A TO-... |
IXFT16N90Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH 900V 16A TO-2... |
IXFT17N80Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH 800V 17A TO-2... |
IXFT20N60Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH 600V 20A TO-2... |
IXFT20N80Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH 800V 20A TO-2... |
IXFT21N50Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH 500V 21A TO-2... |
IXFT26N50Q | IXYS | -- | 1000 | MOSFET N-CH 500V 26A TO-2... |
IXFT26N60Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH 600V 26A TO-2... |
IXFT60N25Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH 250V 60A TO-2... |
IXFT74N20Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH TO268 |
IXFT1874 TR | IXYS | 0.0 $ | 1000 | MOSFET N-CH TO268 |
IXFT26N50Q TR | IXYS | 0.0 $ | 1000 | MOSFET N-CH 500V 26A TO26... |
IXFT40N30Q TR | IXYS | 0.0 $ | 1000 | MOSFET N-CH 300V 40A TO26... |
IXFT52N30Q TRL | IXYS | 0.0 $ | 1000 | MOSFET N-CH 300V 52A TO26... |
IXFT58N20Q TRL | IXYS | 0.0 $ | 1000 | MOSFET N-CH 200V 58A TO26... |
IXFT70N20Q3 | IXYS | 9.3 $ | 58 | MOSFET N-CH 200V 70A TO-2... |
IXFT50N30Q3 | IXYS | 9.3 $ | 21 | MOSFET N-CH 300V 50A TO-2... |
IXFT30N50Q3 | IXYS | 9.3 $ | 35 | MOSFET N-CH 500V 30A TO-2... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
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