Allicdata Part #: | IXTH04N300P3HV-ND |
Manufacturer Part#: |
IXTH04N300P3HV |
Price: | $ 14.73 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | 2000V TO 3000V POLAR3 POWER MOSF |
More Detail: | N-Channel 3000V 400mA (Tc) 104W (Tc) Through Hole ... |
DataSheet: | IXTH04N300P3HV Datasheet/PDF |
Quantity: | 33 |
1 +: | $ 13.38750 |
30 +: | $ 11.25870 |
120 +: | $ 10.34590 |
Specifications
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-247-3 Variant |
Supplier Device Package: | TO-247HV |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 104W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 283pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 190 Ohm @ 200mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 400mA (Tc) |
Drain to Source Voltage (Vdss): | 3000V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
Description
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IXTH04N300P3HV is a n-channel enhancement mode MOSFET (Metal Oxide Semiconductor Field Effect Transistor) intended for use in high voltage switching applications. The IXTH04N300P3HV is packaged in an industry standard TO-220/TO-220FP package, a highly ruggedized and thermally enhanced single-package solution to meet or exceed most application needs.General Description:The IXTH04N300P3HV is the ultimate in performance, combining high switching speed and fast rise time with low gate charge and low gate-to-drain capacitance for maximum efficiency. Its superior switching characteristics make it ideal for high current (up to 3A) circuits and high temperature (up to 175 °C ambient) applications, as well as for narrow pulse widths. IXTH04N300P3HV also features a Pb-free lead-free corrosion resistant package, making it perfect for long circuit life and reliability. The product excels in high speed applications, making it an ideal choice for automotive, audio, video, power, and medical electronics.
Application Field:IXTH04N300P3HV is designed for efficient switching of high voltage supplies in audio, video, consumer and automotive systems. Its low input capacitance, fast switching speed, and high current capability make it ideal for applications requiring high level of precision, such as Radio Frequency (RF) amplifiers and switching, Pulse Width Modulated (PWM) amplifiers, motor speed controls, and switching power supplies. The product also excels in high frequency switching applications, such as frequency converters, and applications where low input capacitance is required, such as low dropout (LDO) regulators.
Working Principle:The IXTH04N300P3HV operates on the principle of the metal-oxide semiconductor field-effect structure. A layer of oxide material (in this case, a high-impedance silicon oxide) is sandwiched between the metallic gate terminal and the n-type silicon substrate material. A voltage applied to the gate terminal causes a conducting channel to form in the substrate material between the source and drain terminals. The current flow through this channel is controlled by the gate-to-substrate voltage. The device is designed to operate with a low gate-to-substrate voltage, which allows the use of lower power supplies. The IXTH04N300P3HV has an input capacitance of 40pF, a maximum voltage rating of 6.6V, a maximum current of 3A, and a maximum temperature rating of 175°C.
The specific data is subject to PDF, and the above content is for reference
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