IXTH10P50P

IXTH10P50P is an advanced type of single MOSFET that has been created especially for low voltage, high-power applications.

This type of MOSFET can be used in a variety of applications because its high drain-source voltage and low threshold voltage allow it to handle large amounts of power while remaining capable of switching at high frequencies. Additionally, IXTH10P50P\'s low drain-to-source capacitance makes it suitable for use in video applications.

Voltage Features

The IXTH10P50P has a drain-source voltage of (V_DS) 10V and a maximum drain current (I_D) 50A with a maximum drain-source on-state resistance (R_DS(on)) of 20 mΩ. Additionally, the threshold voltage is 2.0V maximum with a gate-source voltage (V_GS) of ±20V. The continuous drain current (I_D) is 75A with a maximum pulsed drain current of 170A.

Performance

The IXTH10P50P also provides excellent power dissipation and has a maximum junction temperature of +175°C. It has a superb total gate charge of only 40 nC, a turn-on delay time of 160 ns and a turn-off delay time of 180 ns. Additionally, its low gate charge of 7 nC makes it extremely energy efficient.

Applications

The IXTH10P50P is suitable for use in a variety of applications, including consumer electronics, automotive, mobile computing, and industrial applications. Its high power capability, low gate charge, and low on-state resistance make it well-suited for high-current switching and power delivery applications.

Some common applications for IXTH10P50P include motor control applications, DC/DC converters, and high-power converters. Additionally, its high-frequency switching capability makes it suitable for high-speed switching applications such as clock and data distribution networks.

Working Principle

The IXTH10P50P is a voltage controlled device. The voltage between the gate and the source terminal controls the current flow between the drain and the source terminals. When a voltage is applied to the gate, an electric field is created. This electric field attracts electrons from the source to the drain, thus creating a conductive path between the two terminals.

The number of electrons that are attracted to the drain is proportional to the voltage applied to the gate. The higher the voltage on the gate, the more electrons will be attracted to the drain. This results in higher current flow between the source and the drain terminals.

The IXTH10P50P also has a very low threshold voltage, meaning that less than two volts are required to make the device conduct current. This makes it suitable for use in low-voltage applications.

In summary, the IXTH10P50P is a high-performance single MOSFET that is suitable for use in a wide range of applications. Its low-voltage requirements, high current capability, low on-state resistance, and low gate charge make it an ideal choice for many low-voltage, high-power applications.