IXTH10P60 Allicdata Electronics
Allicdata Part #:

IXTH10P60-ND

Manufacturer Part#:

IXTH10P60

Price: $ 7.18
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET P-CH 600V 10A TO-247AD
More Detail: P-Channel 600V 10A (Tc) 300W (Tc) Through Hole TO-...
DataSheet: IXTH10P60 datasheetIXTH10P60 Datasheet/PDF
Quantity: 126
1 +: $ 6.52050
30 +: $ 5.34681
120 +: $ 4.82517
510 +: $ 4.04271
Stock 126Can Ship Immediately
$ 7.18
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-247-3
Supplier Device Package: TO-247 (IXTH)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 300W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 1 Ohm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXTH10P60 is a widely used insulated gate bipolar transistor (IGBT). An IGBT is a power semiconductor designed to enhance the power efficiency and performance of power circuits. This IGBT combines the functions of a power transistor and a power diode. It has many applications in power electronics circuits, especially in automotive motor drives, as well as high-current ac-to-dc and dc-to-dc converters. The IXTH10P60 has several important features, including a 600V Operating Voltage, a high-performance Switching Current at an average between 25-35A, and a low Gate Threshold Voltage of 4V.

The IXTH10P60 features a fast switching speed and a high power capacity of 600V @ 30A. It is mainly suitable for high-efficiency motor drives, ac-to-dc and dc-to-dc power converters and power factor controllers. The fast switching speed allows the IXTH10P60 to control the speed of motors more accurately and reduce the size of the design. This leads to greater power efficiency and improved system performance.

The IXTH10P60 is an N-channel enhancement type power MOSFET transistor. The device operates under normal drain source voltage, which is between VDD and VSS. The drain and source are insulated from the gate. This provides protection from voltage spikes, resulting in improved reliability. The channel is formed in the body between the source and the drain. When the gate-voltage is positive the electrons move into the channel and the transistor is in ON state because of the transistor is a N-channel device.

The IXTH10P60 has a very useful application as a amplifier, or switch in RF circuits, as it helps in the correct routing of signals. This makes it very useful in highly sensitive applications run at extremely low frequencies. It can work as both a high side switch and a low side switch.

The working principle of the IXTH10P60 is summarized as follows: when a voltage is applied to the Gate terminal, it influences the conductive channel formed between the Source and Drain of the IGBT, so that the Drain current decreases. As the voltage between Gate and Source increases, the current increase also increases. This phenomenon is called the “voltage-current characteristic” and is fundamental for the operation of the IXTH10P60.

Due to its high performance, the IXTH10P60 is widely used in various types of power designs. It is reliable, easy to use and has a wide range of applications, ranging from low-power to high-power levels. It’s simple and effective design makes it suitable for use in a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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