IXTH110N25T Allicdata Electronics
Allicdata Part #:

IXTH110N25T-ND

Manufacturer Part#:

IXTH110N25T

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 250V 110A TO-247
More Detail: N-Channel 250V 110A (Tc) 694W (Tc) Through Hole TO...
DataSheet: IXTH110N25T datasheetIXTH110N25T Datasheet/PDF
Quantity: 360
Stock 360Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Package / Case: TO-247-3
Supplier Device Package: TO-247 (IXTH)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 694W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 157nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 24 mOhm @ 55A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXTH110N25T is a single n-channel enhancement-mode transistor that is part of the IXTH series of field-effect transistors (FETs) designed by Infineon. It is designed for use in a variety of applications, including audio amplifiers, switching controllers, and other electronic power systems.

The IXTH110N25T is a MOSFET transistor manufactured from a silicon based material and features a TO-220F package. This package is particularly well-suited to high-power applications as it has a maximum thermal resistance of 14°C/W and a junction-to-ambient thermal resistance of 0.36°C/W. Furthermore, the IXTH110N25T has a maximum drain current rating of 110A and a single-pulse drain current rating of 140A.

The working principle of the IXTH110N25T transistor is based on Mosfet or Metall-Oxide-Semiconductor Field-Effect-Transistor Technology. This type of transistor uses an electric field to control the current flow between the source and the drain. In this type of transistor, the switching action is triggered by the gate voltage which means that the transistor can be switched on and off very quickly, enabling it to be used for high-speed applications such as switching controllers.

The IXTH110N25T features a very low on-state resistance of 0.08 Ohm, making it ideal for a variety of power management applications. The transistor also features a low forward voltage drop of 1.4V and a low gate capacitance of 7pF which allows for low power dissipation. Furthermore, the IXTH110N25T offers excellent switching performance, with a typical turn-on and turn-off time of 4ns, making it an excellent choice for high-speed switching applications.

The IXTH110N25T is ideal for a variety of power management applications such as audio amplifiers, switching controllers, and other electronic power systems. The transistor offers excellent performance in a wide variety of applications thanks to its low on-state resistance, low forward voltage drop, and excellent switching performance. The IXTH110N25T is therefore an excellent choice for a wide range of power management applications.

The specific data is subject to PDF, and the above content is for reference

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