IXTH1N100 Allicdata Electronics
Allicdata Part #:

IXTH1N100-ND

Manufacturer Part#:

IXTH1N100

Price: $ 3.17
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 1000V 1.5A TO-247
More Detail: N-Channel 1000V 1.5A (Tc) 60W (Tc) Through Hole TO...
DataSheet: IXTH1N100 datasheetIXTH1N100 Datasheet/PDF
Quantity: 1000
30 +: $ 2.85264
Stock 1000Can Ship Immediately
$ 3.17
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 25µA
Package / Case: TO-247-3
Supplier Device Package: TO-247 (IXTH)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 60W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 11 Ohm @ 1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Drain to Source Voltage (Vdss): 1000V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXTH1N100 is a single MOSFET type device that has become increasingly popular due to its wide array of integrated features and applications. The device is designed for a variety of applications, ranging from switching, logic and motor control to audio and telecom architectures. It also offers a range of features, such as low on-resistance, over-temperature protection, thermal shutdown, enhanced current handling, and a low input capacitance.

The IXTH1N100 is a high performance MOSFET that can be used in switching and logic applications. It is a field effect transistor that uses a depletion type MOSFET as the conductive element. In operation, the MOSFET acts as either an insulator or a conductor depending on the voltage applied to its gate electrode. By applying a positive voltage to the gate, the depletion layer is depleted, and the MOSFET becomes a low resistance path. Conversely, by applying a negative voltage to the gate, the depletion layer is replenished, and the MOSFET acts as an insulator.

The IXTH1N100 MOSFET has a maximum drain-source voltage of 200V and a drain-source current of -25A. Its typical on-resistance is 2.4Ω and its typical gate-source voltage is 16V. The device offers a 50mV temperature coefficient and can operate from -55°C to +175°C. The device is available in several package types and sizes, allowing it to be used in a wide variety of applications.

The IXTH1N100 offers several important features that make it suitable for a wide variety of applications. Its ability to handle high voltages and currents makes it especially suitable for switches and logic circuits. Its low input capacitance helps to reduce switching times and power consumption. The IXTH1N100 also offers thermal shutdown, over-temperature protection, and enhanced current handling.

In summary, the IXTH1N100 MOSFET is an excellent choice for a variety of applications. Its low on-resistance, high drain-source voltage and current, thermal shutdown protection, over-temperature protection, and enhanced current handling make it an ideal choice for switching and logic applications. Its wide range of package types and sizes make it a ideal choice for many different kinds of applications.

The specific data is subject to PDF, and the above content is for reference

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