IXTH1N300P3HV Allicdata Electronics
Allicdata Part #:

IXTH1N300P3HV-ND

Manufacturer Part#:

IXTH1N300P3HV

Price: $ 19.61
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: 2000V TO 3000V POLAR3 POWER MOSF
More Detail: N-Channel 3000V 1A (Tc) 195W (Tc) Through Hole TO-...
DataSheet: IXTH1N300P3HV datasheetIXTH1N300P3HV Datasheet/PDF
Quantity: 44
1 +: $ 17.82270
30 +: $ 15.14940
120 +: $ 14.07990
Stock 44Can Ship Immediately
$ 19.61
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-247-3 Variant
Supplier Device Package: TO-247HV
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 195W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 895pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 30.6nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 50 Ohm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Drain to Source Voltage (Vdss): 3000V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXTH1N300P3HV is a single type MOSFET device made by IXYS, a worldwide leader in the field of semiconductors and integrated circuits. The IXTH1N300P3HV is a very robust and highly reliable component which can be used in a variety of applications involving, but not limited to, power management, motor control, and industrial automation. In this article, we will take a look into the IXTH1N300P3HV\'s application field and working principle.

IXTH1N300P3HV Application Field

The IXTH1N300P3HV is a high voltage MOSFET component, characterized by an on-state resistance of 5 Ohm and an operational current capability of 25A. As such, it can be easily used in applications which require high power handling with high efficiency. Additionally, the IXTH1N300P3HV is capable of operating in temperatures ranging from -55°C to 175°C, making it ideal for use in harsh environments. Lastly, due to its robust construction and reliable performance, it is a popular choice for a variety of industrial automation applications.

IXTH1N300P3HV Working Principle

The IXTH1N300P3HV is a type of MOSFET which employs a metal oxide semiconductor field-effect transistor for amplification and direct-current regulation. It is a voltage-controlled device, wherein a drain-source voltage provides the driving current which regulates the device. In other words, when the voltage at the drain-source increases, the current flow through the MOSFET increases. Conversely, when the voltage at the drain-source decreases, the current flow through the MOSFET decreases.

The IXTH1N300P3HV is designed to provide fast switching speeds, therefore allowing for high frequency operations in power management applications. Additionally, its high breakdown voltage of 1200V is ideal for use in high voltage applications. Finally, due to its low input capacitance of 4.5pF, it is capable of providing a high level of accuracy for precise control in various automated operations.

Conclusion

The IXTH1N300P3HV is a single type MOSFET component from IXYS. It is a robust and reliable component with a wide operating temperature range, suitable for use in hazardous settings. Additionally, it features fast switching speeds, high breakdown voltage, and low input capacitance, which makes it ideal for use in a variety of applications, such as power management, motor control, and automation. In other words, the IXTH1N300P3HV is an excellent choice for any application requiring reliable, accurate, and efficient power handling.

The specific data is subject to PDF, and the above content is for reference

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