IXTH32P20T Allicdata Electronics
Allicdata Part #:

IXTH32P20T-ND

Manufacturer Part#:

IXTH32P20T

Price: $ 4.95
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET P-CH 200V 32A TO-247
More Detail: P-Channel 200V 32A (Tc) 300W (Tc) Through Hole TO-...
DataSheet: IXTH32P20T datasheetIXTH32P20T Datasheet/PDF
Quantity: 1000
30 +: $ 4.45578
Stock 1000Can Ship Immediately
$ 4.95
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-247-3
Supplier Device Package: TO-247 (IXTH)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 300W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 14500pF @ 25V
Vgs (Max): ±15V
Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V
Series: TrenchP™
Rds On (Max) @ Id, Vgs: 130 mOhm @ 16A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tube 
Description

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IXTH32P20T is a single-pole double-throw (SPDT) n-channel enhancement mode Field Effect Transistor (FET). It is designed to serve as a switch in a wide range of power-switching applications and it has very low on-state resistance (RDS, ON) and low gate charge (Qg).

The IXTH32P20T FET has an operating voltage of up to 200V and can handle currents of up to 32A. It is suitable for applications such as power switching, motor control, and Class D audio amplifier applications. This FET can be used as a load switch or as a switch in an inverter circuit.

The working principle of IXTH32P20T can be explained as follows. The FET acts as an electronic switch, which is activated when an electric field is applied to the gate region of the device. When the electric field is applied, the electrons in the gate-source region of the FET will be attracted to the gate region, which will reduce the resistance between the source and the drain, thus allowing current to flow between the source and the drain.

The IXTH32P20T FET is a very reliable and efficient device that can be used in many types of power-switching applications. It is easy to use and requires very little input to activate. This makes it ideal for applications where space and weight are a concern. It also has a good yield, making it suitable for production use.

In summary, IXTH32P20T is a single-pole double-throw (SPDT) n-channel enhancement mode FET designed for power-switching applications. It has a maximum operating voltage of up to 200V and can handle up to 32A of current. Its working principle is based on the attraction of electrons to the gate region, which reduces the resistance between the source and drain, allowing current to flow. It is a very reliable and efficient device that is easy to use and has a good yield.

The specific data is subject to PDF, and the above content is for reference

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