Allicdata Part #: | IXTH500N04T2-ND |
Manufacturer Part#: |
IXTH500N04T2 |
Price: | $ 7.64 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 40V 500A TO-247 |
More Detail: | N-Channel 40V 500A (Tc) 1000W (Tc) Through Hole TO... |
DataSheet: | IXTH500N04T2 Datasheet/PDF |
Quantity: | 1000 |
30 +: | $ 6.87664 |
Series: | TrenchT2™ |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40V |
Current - Continuous Drain (Id) @ 25°C: | 500A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 1.6 mOhm @ 100A, 10V |
Vgs(th) (Max) @ Id: | 3.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 405nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 25000pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 1000W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247 (IXTH) |
Package / Case: | TO-247-3 |
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The IXTH500N04T2 is a single N-channel enhancement mode MOSFET (metal-oxide semiconductor field-effect transistor). It is a type of transistor that works using the idea of a movable electric charge existing in a low-impedance physical environment which is able to control the electric current between source and drain. As such, the IXTH500N04T2 is well suited for use in power supply and audio devices that require high voltage switching.
As a single N-channel MOSFET, the IXTH500N04T2 is capable of switching signals between the drain and the source. As the gate voltage is increased from 0V onwards, the source current will increase. This will result in a higher drain-to-source voltage. As the voltage reaches its peak, the device enters single-threshold voltage state, allowing for higher drain currents.
The IXTH500N04T2 is a component designed for analog and power supply applications. It can be used in switching applications, such as in audio equipment, as it is able to control high voltage currents with high efficiency and accuracy. It can also be used in power conversion, such as supplying AC/DC voltage in motor control systems. The IXTH500N04T2 is also suitable for pulse width modulation circuits, as it is able to switch high current loads with high efficiency.
The IXTH500N04T2’s working principle involves the modulation of electric current based on the voltage difference between the drain and the source. By increasing the voltage between the source and drain, the switch will turn on and off. This type of switching requires very little power and can be used in order to control current effectively.
The IXTH500N04T2 has a switching saturation voltage of 0.7V, and an ON resistance of 0.4 ohms. It also has an I D (max) of 17 A and an impedance of 1.8 ohms. These specs show that the IXTH500N04T2 is a highly efficient component for use in power supply. In addition, it is also suitable for switching applications, since it is able to control current effectively with very little power consumption.
The IXTH500N04T2 is a single N-channel enhancement mode MOSFET. It is designed for use in analog and power supply applications, and is able to switch high voltage signals with high efficiency and accuracy. Its working principle involves the modulation of electric current based on the voltage difference between the drain and the source. With the specs of 0.7V (switching saturation voltage), 0.4 ohms (ON resistance), 17 A (I D (max)) and 1.8 ohms (impedance), the IXTH500N04T2 is a highly efficient component for use in power supply, as well as in switching applications.
The specific data is subject to PDF, and the above content is for reference
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