IXTH50P10 Allicdata Electronics
Allicdata Part #:

IXTH50P10-ND

Manufacturer Part#:

IXTH50P10

Price: $ 6.28
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET P-CH 100V 50A TO-247AD
More Detail: P-Channel 100V 50A (Tc) 300W (Tc) Through Hole TO-...
DataSheet: IXTH50P10 datasheetIXTH50P10 Datasheet/PDF
Quantity: 143
1 +: $ 5.70780
30 +: $ 4.67838
120 +: $ 4.22205
510 +: $ 3.53737
1020 +: $ 3.08093
Stock 143Can Ship Immediately
$ 6.28
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-247-3
Supplier Device Package: TO-247 (IXTH)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 300W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 55 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXTH50P10 is a type of MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) designed and manufactured by Intersil. The IXTH50P10 is a type of single power MOSFET with a breakdown voltage of 500V and a max drain current of 10A. It is mainly used in medium voltage applications such as voltage regulator circuits and medium-current DC-DC converters.

The MOSFET, in general, is a voltage-controlled field effect device in which the current through the device is controlled by the voltage applied to its gate terminal. The MOSFET is a four-terminal device, where the two source-drain terminals, anode-cathode, are called "power terminals".

The IXTH50P10 MOSFET is a P-type MOSFET, meaning that the gate-source terminal is reverse-biased when a logic signal is applied to the gate, which turns the device OFF. The device will then the turn ON upon a positive logic signal. It is designed using the process of TrenchFET® Technology, which provides superior performance and improved power dissipation when compared to traditional planar MOSFET designs.

The IXTH50P10 consists of a 650V Polysilicon Thick-Gate structure, optimized for low RDS(ON) resistance (with values as low as 0.105 ohms). This means that it can handle more current, which can be useful in relay-switched power converter applications. The device also features a 25mohm gate-source capacitance, low breakdown voltage temperature coefficient, and a 40nC high-temperature gate charge.

The IXTH50P10 can be used in a variety of applications. It is ideal for use in medium-voltage buck or boost regulator circuits or DC-DC converters due to its low gate capacitance and gate charge, and its high current rating. It is also ideal for use in high-efficiency, high-voltage switching applications, such as relay-switched power applications. Additionally, it can be used in solid-state motor control, DC motor drive applications, automotive circuits, and other medium-current applications.

In conclusion, the IXTH50P10 is an ideal choice for medium voltage applications such as voltage regulator circuits and DC-DC converters due to its low RDS(ON) resistance, high current rating, and its low gate-source capacitance and gate charge. It is designed using TrenchFET® technology and can be used in a variety of applications, including high-efficiency relay-switched power applications and other medium-current applications.

The specific data is subject to PDF, and the above content is for reference

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