| Allicdata Part #: | IXTH52P10P-ND |
| Manufacturer Part#: |
IXTH52P10P |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET P-CH 100V 52A TO-247 |
| More Detail: | P-Channel 100V 52A (Tc) 300W (Tc) Through Hole TO-... |
| DataSheet: |  IXTH52P10P Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247 (IXTH) |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 300W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2845pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 60nC @ 10V |
| Series: | PolarP™ |
| Rds On (Max) @ Id, Vgs: | 50 mOhm @ 500mA, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 52A (Tc) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IXTH52P10P is a popular vertical MOSFET that is used in a wide range of applications, including power semiconductors, personal computers, medical equipment, industrial control, and audio systems. This device is characterized by low on-state resistance (Rds), fast switching speeds, and excellent reliability. It is designed to have a very low input capacitance, which makes it suitable for use in high-speed switching applications.
The IXTH52P10P is a single MOSFET with a maximum drain-source voltage rating of 50V and a maximum drain current of 80A. It provides an affordable solution for various applications such as switching, power management, and power control. Additionally, it features a maximum on-state resistance of 0.0059 ohms, which enables it to efficiently reduce power losses when used in high-power applications.
The IXTH52P10P is a vertical structure MOSFET that features three terminals which are labeled as gate, drain, and source. Its gate is responsible for controlling the flow of current from source to drain. As the gate-source voltage increases, the current flow from drain to source also increases until it reaches the maximum drain current rating. The gate terminal should connect to a voltage source or the drain terminal in order to operate the device. Additionally, the device has an optimally designed body and a gate that are both made of high-quality alloys.
The working principle of the IXTH52P10P is based on the MOSFET structure, which is a form of electrically controlled field effect transistor. Basically, the device is designed to become conductive when a suitable voltage is applied to the gate. When the voltage is switched off, the device is naturally turned off. This is because the drain-source channel is blocked by a thin oxide layer, which is generated by the diffusion of oxygen molecules into the silicon.
The IXTH52P10P is commonly used in high efficiency switching applications due to its small on-state resistance, fast switching speeds, and high power ratings. It is also used in power ICs and power management systems for its excellent reliability and performance. Additionally, the device can be used in audio systems for its low noise levels, low power consumption, and wide frequency response.
In addition to its wide range of uses, the IXTH52P10P also offers a cost-effective solution for most applications due to its affordable price. Its wide availability and low cost make it an attractive option for many electronic devices and device manufacturers looking to reduce costs while improving performance.
In conclusion, the IXTH52P10P is a popular vertical MOSFET designed for a wide range of applications. It offers low on-state resistance, fast switching speeds, and excellent reliability. Additionally, it is highly cost-effective, making it a great choice for many high-power and high-efficiency applications. With its impressive performance and low cost, the IXTH52P10P is an excellent option for device manufacturers looking to reduce costs while improving performance.
The specific data is subject to PDF, and the above content is for reference
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