IXTH72N20T Allicdata Electronics
Allicdata Part #:

IXTH72N20T-ND

Manufacturer Part#:

IXTH72N20T

Price: $ 2.83
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 200V 72A TO-247
More Detail: N-Channel 200V 72A (Tc) Through Hole TO-247 (IXTH...
DataSheet: IXTH72N20T datasheetIXTH72N20T Datasheet/PDF
Quantity: 1000
30 +: $ 2.54310
Stock 1000Can Ship Immediately
$ 2.83
Specifications
Series: --
Packaging: Tube 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: --
Vgs(th) (Max) @ Id: --
FET Feature: --
Power Dissipation (Max): --
Operating Temperature: --
Mounting Type: Through Hole
Supplier Device Package: TO-247 (IXTH)
Package / Case: TO-247-3
Description

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The IXTH72N20T is a Power MOSFET, which is classified as a single transistor in the family of FETs (Field-Effect Transistors) and MOSFETs (Metal Oxide Semiconductor Field-Effect Transistors). It is a device used for switching electrical or electronic signals, and is especially suitable for use in high power and high voltage applications.

The IXTH72N20T has a breakdown voltage of 600 volts, a drain-source voltage of 200 volts, an on-resistance of 2 ohms, an ESD (Electro-Static Discharge) of 2.5kV and a thermal resistance of 1.5K/W. Its gate-source maximum voltage is ± 15 V and it has a channel temperature of -55°C to +150°C. It is available in a surface-mount form.

In operation, the IXTH72N20T serves as an amplifier or switching mechanism using the principles of the Metal Oxide Semiconductor (MOS) technology. It is an effective solution for applications where high power, high voltage and low power consumption are necessary, such as inverter circuits, motor and variable speed control, and switching power supplies.

In comparison with traditionally used bipolar junction transistors (BJTs), MOSFETs are much more efficient in terms of power consumption. Being faster, MOSFETs can respond quickly to changing electrical signals, allowing for higher frequency response and greater power efficiency.

The IXTH72N20T has two packages available: the D2-Pak and DPAK-2. D2-Pak is a standard surface-mount package that consists of two metal plates, combining the source and gate to form a single package. Its gate-source voltage is rated at ±15V and its drain-source voltage is rated at 200V.

The DPAK-2 is slightly larger than the D2-Pak. It also consists of two metal plates but with a divided source-gate junction, which provides a higher current rating. Its gate-source voltage is rated at 25V and its drain-source voltage is rated at 300V. It is also capable of withstanding electrostatic discharge up to 1000V.

The IXTH72N20T is a versatile MOSFET, capable of meeting the requirements for high power, high voltage and low power applications. Its two different packages provide flexibility for a wide range of applications, and its efficiency and high frequency response make it a reliable solution for day-to-day operations.

The specific data is subject to PDF, and the above content is for reference

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