IXTY2N100P

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IXTY2N100P is a type of power Metal–Oxide-Semiconductor Field-Effect Transistor (MOSFET) that is specially designed and manufactured to be used in high voltage, high speed switching. This kind of transistor is often referred to as an Insulated Gate Bipolar Transistor (IGBT) because of its special construction. As a result of its specialised design, the IXTY2N100P has a number of very unique properties and characteristics that make it of great interest to various circuit designers. In this article, we will look at the application field and working principle of the IXTY2N100P.

The IXTY2N100P is most suitable for high voltage applications where high speed and low to moderate current switching is needed. The IXTY2N100P is designed for operation in the range of 500V to 800V. It has a maximum on-state current at 500V of 100A, a turn-off delay time of 5µs and a turn-on delay of 60µs. The IXTY2N100P also has a total capacitance of only 150pF, making it ideal for use in high speed circuit designs. It also has a large amount of power dissipation with its maximum power dissipation of 170W.

The construction of the IXTY2N100P is the main reason why it is able to offer such unique and advantageous properties. The IXTY2N100P consists of an N-channel silicon bipolar junction transistor and a driver. The driver is responsible for controlling the behavior of the N-channel silicon bipolar junction transistor. The driver is connected to the gate via isolation material, allowing the driver to control its behavior.

When a voltage difference is applied between the gate terminal of the IXTY2N100P and the ground, the driver will cause a current to flow through the N-channel silicon bipolar junction transistor. If the applied voltage is high enough, the N-channel silicon bipolar junction transistor will turn on, allowing current to flow from the source terminal to the drain terminal. When the voltage is increased further, the current flow through the N-channel silicon bipolar junction transistor will increase, allowing even more current to flow. This is known as the "saturation" state of the IXTY2N100P.

Conversely, when the applied voltage decreases below the "threshold voltage", the IXTY2N100P will enter the "cut-off" state. In this state, the current through the N-channel silicon bipolar junction transistor decreases to near zero and the transistor is turned off. This can be very useful in some circuit designs, as it allows for accurate control over current flow.

The IXTY2N100P is an excellent choice for many types of high voltage, high speed applications. It has a maximum on-state current of 100A and is designed for operation in the range of 500V to 800V. In addition, it has a maximum power dissipation of 170W and a total gate capacitance of only 150pF. Its superior construction makes it ideal for use in high speed circuit designs and its low on-state resistance and fast switching speeds make it an attractive choice for use in power supplies, motor controllers, servo controllers and other similar applications.

The specific data is subject to PDF, and the above content is for reference