IXTY1N80

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IXTY1N80 is a sourced-gate, field-effect transistor (FET) with specific benefits to certain apps and markets. This FET is used in power supply designs, electronics and computer engineering, advanced LED lighting systems, and other commercial and industrial applications. This type FET offers high energy density, high power efficiency, and stable operation when used in specific multi-phase switching converter designs. It is used to regulate the power distribution in among other things, automotive power distribution systems.

A FET is a three-terminal semiconductor device that is used to automatically regulate and control current flow. It is built upon the same principles as a vacuum tube, but unlike a vacuum tube, a FET does not require a filament or heater to control the gate voltage. FETs are one type of the four main types of transistor technology, the other types being the bipolar junction transistor (BJT), metal oxide semiconductor FET\'s (MOSFET) and insulated gate bipolar transistors (IGBT\'s).

IXTY1N80 is a MOSFET single found in power supply designs, electronics and computer engineering, advanced LED lighting systems, and other commercial and industrial applications. It is based on a P-channel MOSFET technology and has gate-source and gate-drain breakdown voltages of 30V and 8V respectively. This FET provides an effective on-state resistance of only 1.5ohms and an on-state power dissipation of 1.31W. It offers fast switching characteristics that permit dead time requirements of only 3μs, allowing high power conversion efficiency and low switching losses.

The operating conditions of IXTY1N80 are usually specified at a drain-source voltage (VDS) of 16V along with a drain current (ID) of 4.0A. The FET has a maximum numeral junction temperature of 150⁰C, which is suitable of power designs, LED lighting and other commercial applications. The drain to source and gate to source capacitances are also given; Cdg = 310pF and Cds = 78pF respectively for a Vgs of -4V.

The main working principle of FETS is based on the band structure of semiconductors. When a voltage is applied to the gate-source terminal, it creates a fluctuating electric field that modifies the coulomb field in the channel from source through drain. This modulates the electron flow by changing the energy bands in the conducting channel and blocking the current flow through it. When the gate-source voltage is removed, or the channel is completely depleted of carriers, the device is in the off-state and does not conduct.

Additionally, IXTY1N80 offers very high current handling capability and low static dissipative power losses due to its planar construction. Its compact size allows for more efficient and higher density of power switches to be used within a given area when compared to other larger switches. Moreover, its thermally enhanced packaging helps reduce the overall temperature rise and rise of the device, thus helps achieve higher power efficiency and improved reliability.

In conclusion, IXTY1N80 is a highly efficient and reliable MOSFET single found in different power designs, commercial and industrial applications and also with advanced LED lighting systems for its various advantages such as low static dissipative loss, high power efficiency, fast switching ability and low switching losses. Moreover, its thermally enhanced packaging and its small form factor make it a very attractive choice in today’s high performance power systems.

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