IXTY1R4N60P

Vgs(th) (Max) @ Id:	5.5V @ 25µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	TO-252, (D-Pak)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	50W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	140pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	5.2nC @ 10V
Series:	PolarHV™
Rds On (Max) @ Id, Vgs:	9 Ohm @ 700mA, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	1.4A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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Introduction of IXTY1R4N60P Application Field and Working Principle

IXTY1R4N60P is an advanced type of field effect transistor (FET). It is a short-channel MOSFET (metal-oxide-semiconductor field effect transistor) with P-channel type in a low-profile thin-pak package. It is designed and manufactured to meet a wide range of industrial and consumer applications. This transistor is known for its superior performance and reliability. With its low-order features and superior overall performance, it is ideal for use in various electronic devices and systems.

Key Features and Use Cases of IXTY1R4N60P

One of the key features of IXTY1R4N60P is its superior thermal performance. It offers superior power ratings with a maximum power dissipation of 1.4 W and thermal resistance of about 4.15°C/W. This high thermal performance ensures the transistor is able to operate steadily under extreme conditions. This transistor is also highly resistant to interference from external signals. Its internal shields minimize the noise caused by these signals, reducing the loss of data and providing an improved signal-to-noise ratio. This is especially useful for applications requiring a high signal-to-noise ratio such as digital-audio receivers, power amplifiers and instruments.In addition, the IXTY1R4N60P has a high input impedance and low on-resistance, providing superior levels of power efficiency. This makes it ideal for use in various power management applications, such as motor controls, switches and power supplies.

IXTY1R4N60P Working Principle

The working principle of the IXTY1R4N60P is based on the junction field effect principle, also known as the JFET principle. The device has two gate electrodes, the gate and the drain electrodes, and two thin-film gates embedded between them. An external signal can be applied to the gate electrodes, which will cause a voltage between the two gates, creating a potential barrier between the drain and the source. This potential barrier will then induce an electric field within the device, which will cause the current flow to vary. The application of the external signal increases or decreases the potential barrier between the drain and the source, controlling the current flow through the device. The IXTY1R4N60P is usually used as an electronic switch or a voltage regulator, depending on its operating mode.

Conclusion

In conclusion, IXTY1R4N60P is a type of MOSFET which is widely used to enable better power management and switching in a variety of applications. It is characterized by its high power rating, high thermal performance, high input impedance, low on-resistance, and its ability to minimize noise interference. Its working principle is based on the JFET principle, which enables the device to control the flow of current through the device by applying an external signal.

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