Allicdata Part #: | IXTY2R4N50P-ND |
Manufacturer Part#: |
IXTY2R4N50P |
Price: | $ 0.79 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 500V 2.4A DPAK |
More Detail: | N-Channel 500V 2.4A (Tc) 55W (Tc) Surface Mount TO... |
DataSheet: | IXTY2R4N50P Datasheet/PDF |
Quantity: | 1000 |
70 +: | $ 0.71001 |
Vgs(th) (Max) @ Id: | 5.5V @ 25µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252, (D-Pak) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 55W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 240pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 6.1nC @ 10V |
Series: | PolarHV™ |
Rds On (Max) @ Id, Vgs: | 3.75 Ohm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.4A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Last Time Buy |
Packaging: | Tube |
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The Ixty2r4n50p is a type of transistor that belongs to the category of FETs, MOSFETs and single. It is primarily used in the fields of power supply, DC-DC converters, and motor control. The main purpose of this device is to help reduce power consumption and boost the efficiency of the system.
In the world of transistors and electronic components, the Ixty2r4n50p stands out due to its features and working principle. This particular transistor works on the principle of Field Effect Transistor (FET). FETs are well known for their high impedance and low noise operation, making them suitable for applications like power minimization and regulation.
One of the major features of the Ixty2r4n50p is its low on-state resistance. It has very low RDS (ON) at high switching frequency and low input capacitance. It has a typical gate capacitance of around 5pF and a typical RDS (ON) of around 0.15 Ohms. These characteristics together make the Ixty2r4n50p an ideal choice for applications that require low power consumption and high efficiency.
The working principle of the Ixty2r4n50p is based on FET technology. It uses two p-type layers as the gate, which are made up of two different materials. The gate terminals control the flow of current between the source and the drain. When a gate voltage is applied to the gate terminals, the electric field created between the two charges will attract holes near the source and the drain, thereby controlling the current flow.
The Ixty2r4n50p is an ideal solution for many applications due to its features and performance. It is perfect for high power applications such as power supply, DC-DC converters, and motor control. It has been tested and proven to be reliable in many applications. Furthermore, it can help reduce power consumption and increase efficiency in these applications.
The Ixty2r4n50p is a versatile and reliable transistor that is suitable for many applications. It is easy to use and setup, and its features and performance make it an ideal choice for many different types of applications. With its low on-state resistance and high switching frequency, the Ixty2r4n50p is the perfect choice for any power supply, DC-DC converter, or motor control project.
The specific data is subject to PDF, and the above content is for reference
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