IXTY4N65X2

Vgs(th) (Max) @ Id:	5V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	TO-252
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	80W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	455pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	8.3nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	850 mOhm @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	4A (Tc)
Drain to Source Voltage (Vdss):	650V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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The IXTY4N65X2 is an N-channel, low-voltage MOSFET designed for power management applications ranging from home entertainment systems, office computers and white goods. This transistor type can be used as a switch for various different applications as it can handle high current and power. The IXTY4N65X2 has a lower Rds(on) and a higher drain-source voltage than many of its competitors making it the ideal choice for any power management application.The IXTY4N65X2 is a 55V, 40A, 2.5mOhm MOSFET. It is a single N-channel, low voltage (Vds) MOSFET that is capable of operating at temperatures up to 150°C. This MOSFET offers lower stand by current, allowing it to reduce overall system power consumption and therefore reducing end user electricity bills.Benefits of IXTY4N65X2 include high-side current sensing, improved efficiency over linear regulators, low protection cell switching frequency, fast reverse protection response time, adjustable current regulation and zero standby current.The IXTY4N65X2 works by using a single N-channel MOSFET to control the power output from the source voltage. This MOSFET acts like a switch by controlling the amount of current and power that passes through the MOSFET. It does this by controlling the drain-source voltage and current (ID) which is between the source voltage and the drain (the load). The MOSFET works by first allowing the current to flow through the channel. This is called the “on” state. When the MOSFET is in the ‘on’ state, the drain-source voltage is low because the current is flowing through the channel. When the MOSFET is in the ‘off’ state, the drain-source voltage is higher because there is no current flowing through the channel. When the drain-source voltage is in the “on” state, the power is regulated and the IXTY4N65X2 is capable of controlling both the current and power output from the voltage source. The IXTY4N65X2 is designed to act as a switch device by controlling the on/off state of the MOSFET. It can do this by using a gate voltage input. This voltage is normally a digital input that controls how much current and power is output from the source voltage. This makes the IXTY4N65X2 ideal for applications that require the regulation of current and power.The IXTY4N65X2 is a reliable and cost effective solution for power management applications. It offers a lower stand by current, which reduces overall system power consumption, as well as fast reverse protection response time, adjustable current regulation and zero standby current. The IXTY4N65X2 is a reliable, cost effective and versatile solution for various power management applications.

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